Probing the Internal Electric Field in GaN/AlGaN Nanowire Heterostructures

Müßener, Jan; Teubert, J.; Hille, Pascal; Schäfer, Markus; Schörmann, Jörg; Mata, Marı́a de la; Arbiol, Jordi; Eickhoff, Martin

doi:10.1021/nl501845m

Cited by 22 publications

(21 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Sample description. The investigated NWs were grown by plasma-assisted molecular beam epitaxy (T substrate = 790°C, T Ga = 916°C, T Al = 1069°C) on Si (111) substrates 19,29 . Figure 1 illustrates the GaN NWs (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Hence, heterostructures based on these materials suffer from a strong electric field induced by a piezo-and pyroelectric polarization parallel to the most natural crystal growth direction [0001], the so called c-axis [7][8][9][10] . The polarizationinduced internal fields cause a redshift of the exciton emission energy inside these heterostructures, known to be the prominent feature of the quantum-confined Stark effect (QCSE) [11][12][13][14][15] , which is accompanied by a drastic decrease of the spatial electron-hole overlap in the direction of the c-axis 3,8,[16][17][18][19][20][21][22][23][24][25] . Different approaches to eliminate or to diminish the electric field across the optically active region in group-III-nitride heterostructures have been investigated, such as growth on non-or semi-polar crystal planes 26,27 , forcing the growth of the cubic zincblende phase 28 , or the screening of the fields with doping-induced free carriers 29 .…”

mentioning

confidence: 99%

See 1 more Smart Citation

Suppression of the quantum-confined Stark effect in polar nitride heterostructures

et al. 2018

View full text Add to dashboard Cite

Recently, we suggested an unconventional approach (the so-called Internal-Field-Guarded-Active-Region Design "IFGARD") for the elimination of the quantum-confined Stark effect in polar semiconductor heterostructures. The IFGARD-based suppression of the Stark redshift on the order of electronvolt and spatial charge carrier separation is independent of the specific polar semiconductor material or the related growth procedures. In this work, we demonstrate by means of micro-photoluminescence techniques the successful tuning as well as the elimination of the quantum-confined Stark effect in strongly polar [000-1] wurtzite GaN/AlN nanodiscs as evidenced by a reduction of the exciton lifetimes by up to four orders of magnitude. Furthermore, the tapered geometry of the utilized nanowires (which embed the investigated IFGARD nanodiscs) facilitates the experimental differentiation between quantum confinement and Stark emission energy shifts. Due to the IFGARD, both effects become independently adaptable.

show abstract

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Suppression of the quantum-confined Stark effect in polar nitride heterostructures

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Finally, we devote the final section of the present work to illustrate possible polarity inversions in nanostructured semiconductor materials, discussing a few examples of inversion boundaries, which eventually allow a smart manifold functionalization of the Polarity-Driven Growth of Vertical Nanowires. While semiconductor NWs have extensively been studied systems over 48 Poole et al, 49 Gao et al 50 → SAG B (P) Algra et al, 51 Dalacu et al, 52 Calahorra et al 53 → particle-assisted GaN A (Ga) Schuster et al, 33 Bengoechea-Encabo et al 54 → SAG B (N) Fernańdez-Garrido et al, 55 Bertness et al, 56 Schuster et al 57 → particle-assisted Muβëner et al 58 → spontaneous growth InN A (In) Wang et al 59 → spontaneous growth B (N) Stoica et al, 60 Chang et al, 61 Wang et al 59 → spontaneous growth ZnO A (Zn) Baxter et al, 62 Sallet et al, 63 Utama et al, 64 Guillemin et al, 65 Sun et al, 66 Nicholls et al 67 → spontaneous growth Scrymgeour et al, 68 Perillat-Merceroz et al, 69 Consonni et al 70 → SAG Jasinski et al 71 → particle-assisted B (O) Guillemin et al 72 → spontaneous growth Consonni et al 70 → SAG Sallet et al 63 → particle-assisted Figure 3. Intrinsic parameters of the binary compounds analyzed, such as the ratio between the constituent sizes (r b /r a ), including the cases of ionic (a), covalent (b), and atomic radius, and the ionic character of the compound showing the electronegativity for each constituent, χ, along with the difference in electronegativity for every considered compound (d), calculated following Pauling's expression (more details provided in the Supporting Information).…”

mentioning

confidence: 99%

The Role of Polarity in Nonplanar Semiconductor Nanostructures

et al. 2019

Self Cite

View full text Add to dashboard Cite

The lack of mirror symmetry in binary semiconductor compounds turns them into polar materials, where two opposite orientations of the same crystallographic direction are possible. Interestingly, their physical properties (e.g., electronic or photonic) and morphological features (e.g., shape, growth direction, and so forth) also strongly depend on the polarity. It has been observed that nanoscale materials tend to grow with a specific polarity, which can eventually be reversed for very specific growth conditions. In addition, polar-directed growth affects the defect density and topology and might induce eventually the formation of undesirable polarity inversion domains in the nanostructure, which in turn will affect the photonic and electronic final device performance. Here, we present a review on the polarity-driven growth mechanism at the nanoscale, combining our latest investigation with an overview of the available literature highlighting suitable future possibilities of polarity engineering of semiconductor nanostructures. The present study has been extended over a wide range of semiconductor compounds, covering the most commonly synthesized III−V (GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb) and II−VI (ZnO, ZnTe, CdS, CdSe, CdTe) nanowires and other free-standing nanostructures (tripods, tetrapods, belts, and membranes). This systematic study allowed us to explore the parameters that may induce polarity-dependent and polaritydriven growth mechanisms, as well as the polarity-related consequences on the physical properties of the nanostructures.

show abstract

“…The electron-hole Coulombic interaction is not considered by the calculations, and hole tunneling from the stem might help to stabilize the exciton in the dot. The second emission line is hence assigned to a charged state of the exciton, which seems reasonable in view of the energy separation between the two peaks.The bias sensitivity of NW1 and NW2 lie almost one order of magnitude above those observed by Müßener et al16 in a dot-in-wire structure. The higher applied voltages required in their case can be explained by the thickness of their AlGaN+AlN barriers.…”

mentioning

confidence: 45%

Correlated Electro-Optical and Structural Study of Electrically Tunable Nanowire Quantum Dot Emitters

et al. 2019

View full text Add to dashboard Cite

Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-optical behaviour of such quantum objects without correlated studies of the structural and optical properties on the same nanowire. In this work, we study the spectral tunability of the emission of a single quantum dot in a GaN nanowire by applying external bias. The nanowires are dispersed and contacted on electron beam transparent Si3N4 membranes, so that transmission electron microscopy observations, photocurrent and micro-photoluminescence measurements under bias can be performed on the same specimen. The emission from a single dot blue or red shifts when the external electric field compensates or enhances the internal electric field generated by the spontaneous and piezoelectric polarization. A detailed study of two nanowire specimens emitting at 327.5 nm and 307.5 nm shows spectral shifts at rates of 20 and 12 meV/V, respectively. Theoretical calculations facilitated by the modelling of the

show abstract

Probing the Internal Electric Field in GaN/AlGaN Nanowire Heterostructures

Cited by 22 publications

References 47 publications

Suppression of the quantum-confined Stark effect in polar nitride heterostructures

Suppression of the quantum-confined Stark effect in polar nitride heterostructures

The Role of Polarity in Nonplanar Semiconductor Nanostructures

Correlated Electro-Optical and Structural Study of Electrically Tunable Nanowire Quantum Dot Emitters

Contact Info

Product

Resources

About