Problems of Masking and Anti-Reflective SiO2 in Silicon Technology

Abstract

The article examines the problems of thermal oxidation of silicon. Oxidation plays an important role in planar technology, which in turn is the basis of the technology of silicon integrated circuits, photodetectors and other solid-state electronics. During our production of silicon p-i-n photodiodes, a number of systematic types of defects and deterioration of product parameters caused by the degradation of masking or anti-reflective coatings during the manufacturing process were observed. A decrease in the insulation resistance of responsive elements in multi-element photodiodes was observed, which contributed to the increase of dark currents. A decrease in the responsivity of the products due to the degradation of the thickness or structure of the anti-reflective coating during technological operations, etc., was also revealed. It was established that the reason for the decrease in insulation resistance is the formation of inversion layers at the Si-SiO2 interface, the presence of which can be detected when measuring CV-characteristics. It was also established that chemical treatment of substrates with SiO2 in boiling acid solutions helps to reduce the thickness of the oxide. To avoid deviation of the thickness of the film from the condition of minimum reflection, it is necessary to grow a thicker layer of anti-reflective coating. It is noted that when etching the oxide during photolithography or when removing the PSG/BSG in hydrofluoric acid, it is not permissible to remove the cassette with plates from the solution for a long time, as this leads to uneven etching of the film due to the flow of the herb on the surface of the substrate. The causes of defect formation in Si and SiO2 during oxidation are given. Thus, with improper mechanical and chemical processing of the plates, cristobalite inclusions may form in the film during oxidation. Cristobalite has a higher density than quartz glass, and the boundaries between amorphous regions and denser crystalline regions represent voids, which can be filled both by impurities from the surface and by the diffusant in the diffusion process. Also, during oxidation in silicon, packing defects are often formed. Centers of defect genesis can be mechanical damage to the plate surface or growth defects.

Influence of silicon characteristics on the parameters of manufactured photonics cells

“…For the working wavelength of the described photodiodes, the anti-reflective oxide should be d SiO2 ≈0.18-0.19 μm [24]. When studying the thickness of the grown anti-reflective oxide in the two studied variants of photodiodes, it was found that the thickness of SiO 2 in PD [111] reaches d SiO2 ≈0.183 μm, and in PD [100] reaches d SiO2 ≈0.17 μm.…”