Problems of noise modeling in the presence of total current branching in high electron mobility transistor and field-effect transistor channels

Abstract

In the framework of analytical and hydrodynamic models for the description of carrier transport and noise in high electron mobility transistor/field-effect transistor channels the main features of the intrinsic noise of transistors are investigated under continuous branching of the current between channel and gate. It is shown that the current-noise and voltage-noise spectra at the transistor terminals contain an excess noise related to thermal excitation of plasma wave modes in the dielectric layer between the channel and gate. It is found that the set of modes of excited plasma waves can be governed by the external embedding circuits, thus violating a universal description of noise in terms of Norton and Thevenin noise generators.

Analytical admittance characterization of high mobility channel

“…The differential equation that describes the potential distribution along the channel x written as [4,5]:…”

“…The development of Field effect transistors (FETs) with a high mobility channel became an interesting realization of terahertz detector and emitter devices employed at room temperature [2]. More recently, the field effect transistors have emerged as important competitors due to the existence of the plasma wave oscillations in the channel [3].…”

“…In addition, the experiments have shown that the high-frequency noise spectra of FETs contain excess noise related to electronic excitation of plasma modes [1]. The analytical admittance characterization of high mobility channel is now making significant inroads into many new large-area applications such as the characterization of the microwave and millimeter-wave behavior of modern transistors (FETs, HEMTs) [2]. Usually the main task of such an analysis is to determine the parameters of the intrinsic small-signal equivalent circuit elements, the densities of the current and voltage fluctuations, the gain and cutoff frequency and the transconductance.…”

Investigation of 2D plasma resonances in HEMTs by using electro-optical sampling technique

“…Up to now, investigations of eigen 2D plasma waves were carried out mainly in the following directions: (i) experimental investigation of the voltage-tunable spectral behaviour of THz radiation emission from FETs/HEMTs (see, e. g. [2,3] and references therein); (ii) theoretical investigation of spectral behaviour of electronic noise in FET/ HEMT channels [2,4,5]; and (iii) experimental and theoretical investigation of both THz radiation resonant detection and THz re-emission at the beating frequency of two-laser excitation (see, e. g. [6] and references therein).…”

Monte Carlo Simulation of Noise and THz Generation in InP FET at Excess of Electrons in Channel

“…These electrons come from highly doped regions close to source and drain contacts. The latter situation is simulated by Monte Carlo particle (MCP) technique coupled to a pseudo-2D Poisson solver [4]. Main attention is paid for optimum conditions to achieve the current self--oscillations in THz frequency range by varying the FET geometry and design.…”