Procedure for accurate noise modelling of microwave FETs against temperature

Pronic, O.; Mitic, G.; Randelovic, J.; Marković, Vera

doi:10.1049/el:20046718

Cited by 4 publications

(3 citation statements)

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“…Therefore, during the last few decades an extensive work has been carried out in the field of signal / noise modelling of microwave transistors. There is a number of different models, starting from accurate physical models which require knowledge about the numerous technological parameters [1,2], through the widely used empirical models, mostly based on equivalent circuit representation of a transistor [3][4][5][6][7][8][9][10][11][12][13][14][15], to the models based on the application of the artificial neural networks, based either on the black box modelling approach [16,17] or on a combination with the empirical models [18].…”

Section: Introductionmentioning

confidence: 99%

“…However, further accuracy improvement can be achieved by introducing the frequency dependent error correction functions in expressions defining the device noise parameters [14]. The modelling procedure is similar to that presented in [8] for Fukui's noise model.…”

Section: Introductionmentioning

confidence: 99%

“…The modelling procedure is similar to that presented in [8] for Fukui's noise model. In [14] and [15] it was shown that the error correction functions calculated for one operating temperature can be used for efficient transistor noise parameters modelling for various device ambient temperatures.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Bias Dependant Noise Wave Modelling Procedure of Microwave Fets

Pronić-Rančić¹,

Marinković²,

Marković³

2012

Journal of Electrical Engineering

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A new noise modelling procedure of microwave field-effect transistors (FETs) valid for various bias conditions is suggested in this paper. The proposed procedure is based on transistor noise wave model. With the aim to improve the noise wave model accuracy, the modification of the model is done by inclusion of the error correction functions into the noise wave model equations. It leads to significant reduction of deviations between measured and simulated noise parameters and therefore better noise prediction is achieved. It is also shown that once determined error correction functions can be applied for accurate noise modelling of the same device for various bias conditions. The validity of the presented noise modelling approach is exemplified by modelling of a specific MESFET device in packaged form.

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