Procedure of removing polymer residues and its influences on electronic and structural characteristics of graphene

Hydrogen reduced graphene oxide/metal grid hybrid film: towards high performance transparent conductive electrode for flexible electrochromic devices

“…Firstly, the use of vacuum, high temperature environment as well as the time consuming and challenging multiple transfer procedures from metal to transparent substrate makes the CVD-grown graphene very expensive [21,22]. Secondly, the multiple transfer steps increase the possibility of film damage or polymer residue which dramatically decreases the turnoff ratio and elevates further the cost of the product [23,24]. Another alternative candidate is reduced graphene oxide (RGO) with a similar structure to graphene, which has been considered as one promising, low-cost, and easily up-scalable alternative towards graphene-based films [25].…”

Influence of the transfer and chemical treatment of monolayer graphene grown for flexible transparent electrodes

“…In general, polydimethylsiloxane (PDMS) [16] is used for the dry transfer process, and poly(methyl methacrylate) (PMMA) [15], for the wet transfer process. These protective layers can be removed by heat treatment after the transfer [17][18][19]. However, if a flexible substrate is used as the target substrate, high-temperature heat treatment cannot be applied, and thus, there is no choice but to perform chemical surface treatment using an organic solvent [20].…”

Hydroxyl-free buffered dielectric for graphene field-effect transistors

“…The Dirac voltage (V BG, Dirac ) of the back-gate device before processing is V BG, Dirac = 49 V, showing a heavy p-doped effect. For the graphene FETs fabricated on Si/SiO 2 substrates, the pdoping of graphene is more easily obtained than n-doping, except for the charge transfer from neighboring adsorbates (such as H 2 O/O 2 molecules) [27] and resist residues [28] on the graphene surface, the silanol groups (Si-OH) with high polarization and other adsorbates on the surface of SiO 2 will also introduce the heavy p-doping of graphene sheet, resulting from the charge transfer [29][30][31].…”