Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET

Abstract

Abstract. This paper presents an inclusive study and analysis of graphene-based MOSFET device at 32nm gate length. The analysis was based on top-gated structure which utilized Hafnium Dioxide (HfO 2 ) dielectrics and metal gate. The same conventional process flows of a transistor were applied except the deposition of bilayer graphene as a channel. The analytical expression of the channel potential includes all relevant physics of bilayer graphene and by assuming that this device displays an ideal ohmic contact and functioned at a ballistic transport. Based on the designed transistor, the on-state current (I ON ) for both GNMOS and GPMOS shows a promising performance where the value is 982.857uA/um and 99.501uA/um respectively. The devices also possess a very small leakage current (I OFF ) of 0.289578nA/um for GNMOS and 0.130034nA/um for GPMOS as compared to the conventional SiO 2/ Poly-Si and high-k metal gate transistors. However, the devices suffer an inappropriate subthreshold swing (SS) and high value of drain induced barrier lowering (DIBL).

Performance Characterization of Schottky Tunneling Graphene Field Effect Transistor at 60 nm Gate Length

“…In order to get the V TH to 0.4V, doping concentration of three processing parameters was first varied. Recent work done by Afifah Maheran et al (2014) andNoor Faizah et al (2016a) through Taguchi optimization method also proved that these parameters hold the key performance of the transistor and was viable to adjust the V TH value closer to the prediction. These parameters are Halo implantation dose, S/D implantation dose and compensation implantation dose.…”

“…Graphene material has recently gained a lot of attention due to their potential as switching devices for impending planar technology nodes. It was introduced as a channel material in a transistor to counter the problems and have been reported (Cheli et al 2009;Ferrari et al 2006;Fiori et al 2014;Noor Faizah et al 2016a;Zhu & Woo et al 2007). Graphene was found to be the most reliable material thus far with single layer of Carbon behavior, resulting in outstanding gate control over the channel (Cheli et al 2009;Ferrari et al 2006;Fiori et al 2014).…”