Process development of 6-in EUV mask with TaBN absorber

Shoki, Tsutomu; Hosoya, Morio; Kinoshita, Takeru; Kobayashi, Hideo; Usui, Youichi; Okubo, Ryo; Ishibashi, S.; Nagarekawa, Osamu

doi:10.1117/12.477007

Cited by 17 publications

(10 citation statements)

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“…6 Regarding the refractive indices of LR-TaBN and CrN, we obtained the values from blanks supplier. 7 Simulation was done for patterns parallel to the direction of oncoming EUV light (vertical pattern) in order to separate out the defects which cause shadowing effect away from the main pattern (Fig. 1 …”

Section: -1 Simulationmentioning

confidence: 99%

Defect printability of thin absorber mask in EUV lithography

Kamo¹,

Aoyama²,

Arisawa³

et al. 2009

Alternative Lithographic Technologies

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The effect of mask absorber thickness on defect printability in EUV lithography was studied. In case of very thin absorber, when used for EUVL mask, it became necessary to set specifications for mask defects for the manufacturability of ULSI devices because mask absorber thickness could impact defect printability. We prepared programmed mask defects of LR-TaBN absorber with various thicknesses. We then investigated defect printability of thin absorber mask with Small Field Exposure Tool (SFET) by comparing the data with simulation results.

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Section: -1 Simulationmentioning

confidence: 99%

Defect printability of thin absorber mask in EUV lithography

Kamo¹,

Aoyama²,

Arisawa³

et al. 2009

Alternative Lithographic Technologies

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“…1 shows conventional mask structure using LR-TaBN absorber and CrN buffer blanks. 3 Fig. 2 shows calculated reflectivity and phase shift dependence on LR-TaBN absorber thickness.…”

Section: Introductionmentioning

confidence: 98%

EUVL practical mask structure with light shield area for 32nm half pitch and beyond

Kamo¹,

Aoyama²,

Tanaka³

et al. 2008

Photomask Technology 2008

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The effect of mask structure with light shield area on the printability in EUV lithography was studied. When very thin absorber on EUVL mask is used for ULSI application, it then becomes necessary to create EUV light shield area on the mask in order to suppress possible leakage of EUV light from neighboring exposure shots. We proposed and fabricated two types of masks with very thin absorber and light shield area structure. For both types of masks we demonstrated high shield performances at light shield areas by employing a Small Field Exposure Tool (SFET).

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“…Therefore, many works have been focused on the absorber design to maximize the optical performance [8][9][10][11][12][13][14][15][16]. Among the various optical properties, the reflectivity and aerial image intensity were directly related to the pattern printability of the EUVL system [17][18].…”

Section: Introductionmentioning

confidence: 99%

Numerical modeling of absorber characteristics for EUVL

Kang

Ahn

et al. 2006

SPIE Proceedings

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The characteristics of various potential absorbers, such as Cr, Ta, and TaN materials were quantitatively investigated by calculating the optical contrast and geometrical width variation of pattern image of 25-nm-width transferred through the exposure system. The intrinsic absorber performance was evaluated by the numerical modeling of the reflectivity on the mask and the aerial image intensity on the wafer. The reflectivity on the mask was calculated for various absorber thicknesses (40-70 nm) using Fresnel equation. For the calculation of the aerial image intensity of pattern features with various absorbers, SOLID-EUV, which is capable of rigorous electromagnetic field computation, was employed. It could be reasonably concluded that the TaN absorber model showed superior optical characteristics compared to other absorber systems, whereas the best performance on the geometrical characteristics was found in the Ta absorber system.

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Process development of 6-in EUV mask with TaBN absorber

Cited by 17 publications

References 0 publications

Defect printability of thin absorber mask in EUV lithography

Defect printability of thin absorber mask in EUV lithography

EUVL practical mask structure with light shield area for 32nm half pitch and beyond

Numerical modeling of absorber characteristics for EUVL

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