Process emulation for predicting die shift and wafer warpage in wafer reconstitution

Yang, Cheng-Ying; Liu, Y.-C.; Chen, Kuo-Shen; Yang, Tian; Wang, Y.-C.; Lee, S.-S.

doi:10.1109/icept.2017.8046441

Cited by 5 publications

(1 citation statement)

References 11 publications

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“…However, there is a tradeoff between the die shift and die protrusion caused by high die-placement load [10]: they achieve the die shift of ±15 μm at 10 μm die protrusion. The die shift is also dependent on wafer warpages and each process condition mainly including their temperatures [11]. Ling et al, have mentioned that 85% of die shift is resulted from thermal and mechanical (TM) effects such as Young's moduli and coefficient of thermal expansion (CTE) mismatches between the molds and carrier wafers, whereas the rest 15% is due to fluidic forces (FF) such as a shear force [12].…”

Section: Introductionmentioning

confidence: 99%

Significant Die-Shift Reduction and μLED Integration Based on Die-First Fan-Out Wafer-Level Packaging for Flexible Hybrid Electronics

Fukushima

Susumago

Zhou

et al. 2020

IEEE Trans. Compon., Packag. Manufact. Technol.

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Typical die shift is beyond several tens micrometers or more, which is a serious problem on advanced fan-out wafer-level packaging (FOWLP), to give inevitable misalignment errors in the subsequent photolithography processes for fine-pitch redistributed wiring layer (RDL) formation. In particular, this problem is expected to grow all the more serious in chiplets and tiny dies less than 1 mm in a side. In this work, the use of an anchoring layer is proposed to fix these dies/chiplets on a double-side laminate thermo release tape and drastically reduce the die shift. In addition, an on-nail photoplethysmogram (PPG) sensor system as a flexible hybrid electronics (FHE) is integrated with μLED (270 μm by 270 μm) based on a die-first FOWLP methodology using a biocompatible polydimethylsiloxane (PDMS) mold resin for real-time monitoring pulse wave and percutaneous oxygen saturation (SpO2). The repeated bendability of fan-out Au wirings formed on the PDMS and the current-voltage (I-V) behavior of the μLED before and after die embedment in the PDMS is characterized.

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Section: Introductionmentioning

confidence: 99%