Process integration of Cu metallization and ultra low k (k=2.2)

Abstract

The first process integration of Cu metallization and next generation CVD ultra lowk (Trikon Orion ULK, k=2.2) is presented. The current process condition for a 130nm node Cdlowk (k=2.9) process is applied to C N L K and found to be suitable without major modifications. The comparison of post CMP measurement (dishing, erosion, peeling, and scratch) show no significant variation between control (k=2.9) and ULK. The electrical data indicates the successful integration of Cu and ULK. The interconnect capacitance is expected to reduce 20% at O.lpm technology node using the ULK film.