Process Integration of High Aspect Ratio Vias with a Comparison between Co and Ru Metallizations

Vega-Gonzalez, V.; Montero, D.; Versluijs, Janko; Pedreira, O. Varela; Jourdan, N.; Puliyalil, Harinarayanan; Chehab, Bilal; Peissker, Tobias; Ali, Haider; Batuk, Dmitry; Martinez, G.T.; Geypen, J.; Le, Quoc Toan; Bazzazian, N.; Heylen, N.; Veen, M. van der; El-Mekki, Zaid; Webers, Tomas; Vats, H.; Rynders, Luc; Cupak, M.; Uk-Lee, J.; Drissi, Youssef; Halipre, L.; Gillijns, Werner; Charley, Anne-Laure; Verdonck, Pascal; Witters, T.; Gompel, S. V.; Kimura, Yoshie; Ciofi, Ivan; Wachter, B. De; Swerts, Johan; Grieten, Eva; Ercken, Monique; Kim, R.; Croes, Kristof; Leray, Philippe; Jaysankar, Manoj; Nagesh, N.; Ramakers, L.; Murdoch, Gayle; Park, S.; Tőkei, Zsolt; Litta, E. Dentoni; Horiguchi, N.

doi:10.1109/iitc51362.2021.9537535

Cited by 2 publications

(1 citation statement)

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“…the current density that induces failure at 10 y. Under such a scenario, interconnects based on Ru and Co are potential replacements with better reliability than Cu because of their lower resistivity and higher EM activation energies [55][56][57][58][59][60]. The barrierless Ru interconnect together with an integration scheme have been identified to be more EM reliable than Cu [61].…”

Section: Model Applicationsmentioning

confidence: 99%

Recent Progress in Physics-Based Modeling of Electromigration in Integrated Circuit Interconnects

2022

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The advance of semiconductor technology not only enables integrated circuits with higher density and better performance but also increases their vulnerability to various aging mechanisms which occur from front-end to back-end. Analysis on the impact of aging mechanisms on circuits’ reliability is crucial for the design of reliable and sustainable electronic systems at advanced technology nodes. As one of the most crucial back-end aging mechanisms, electromigration deserves research efforts. This paper introduces recent studies on physics-based modeling of electromigration aging of on-chip interconnects. At first, the background of electromigration is introduced. The conventional method and physics-based modeling for electromigration are described. Then studies on how electromigration affects powers grids and signal interconnects are discussed in detail. Some of them focus on the comprehensiveness of modeling methodology, while others aim at the strategies for improving computation accuracy and speed and the strategies for accelerating/decelerating aging. Considering the importance of electromigration for circuit reliability, this paper is dedicated to providing a review on physics-based modeling methodologies on electromigration and their applications for integrated circuits interconnects.

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Section: Model Applicationsmentioning

confidence: 99%

Recent Progress in Physics-Based Modeling of Electromigration in Integrated Circuit Interconnects

2022

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Reliability and resistance projections for rhodium and iridium interconnects from first-principles

Lanzillo

Edelstein

2022

Journal of Vacuum Science &Amp; Technology B

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We apply first-principles simulations to evaluate several properties related to the resistance and reliability of rhodium and iridium interconnects. We find that both Rh and Ir have significantly higher activation energies of diffusion than state-of-the-art Cu interconnects, suggesting greatly improved resistance to electromigration failure. Since the practical integration of metal interconnects requires an adhesion liner, we calculate the metal-to-metal adhesion, surface scattering characteristics, and via resistance of four potential liner materials: TiN, TiO, TaN, and TaO. We find that TiO gives the strong metal-to-metal adhesion for both Rh and Ir, minimizing the risk of delamination. None of the four liner materials considered are found to have a significant impact on surface scattering of Rh or Ir, while the N-containing liners give lower via resistance than the O-containing liners. This work helps build a better understanding of fundamental material properties related to the practical integration of potential next-generation interconnect metals used for advanced semiconductor technology.

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Process Integration of High Aspect Ratio Vias with a Comparison between Co and Ru Metallizations

Cited by 2 publications

References 1 publication

Recent Progress in Physics-Based Modeling of Electromigration in Integrated Circuit Interconnects

Recent Progress in Physics-Based Modeling of Electromigration in Integrated Circuit Interconnects

Reliability and resistance projections for rhodium and iridium interconnects from first-principles

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