Processing and thermal properties of Al/AlN composites in continuous solid–liquid co-existent state by spark plasma sintering

Preparation and properties of Sip/Al composites by spark plasma sintering

“…The improvement in the densification could be associated to the fact that part of Al particles are melted due to the local high temperature resulted from SPS discharging. The molten Al will have the ability to flow freely and then be squeezed into the gaps of Si particles during the holding stage, which as a result favors the densification of the composites [21,22]. Usually, high temperature can fabricate dense specimens by reducing the viscosity and increasing the flow-ability of the molten Al, but too many melted Al will be produced and sprayed out of the mold at much higher temperatures.…”

“…From the XRD patterns, only the diffraction peaks indexed to Al and Si can be observed, which demonstrates that the composites are the mixtures of Si and Al phases without any interaction. No detectable quantity of impurities, such as alumina, is found in the composites, which is attributed to the unique surface cleaning effect of SPS that can destroy the alumina layer by spark discharge [22]. Fig.…”

Evaluation of strengthening behavior of Al–AlN nanostructured composite by the use of modified Heckel model and response surface methodology

“…The advantages of AlN, over other reinforcements such as SiC [4][5][6], Al 2 O 3 [7][8][9][10][11][12], TiC [13], TiB 2 [14], and B 4 C [15], are not reacting with molten aluminum, excellent conductivity, low thermal expansion coefficient, high strength and, good oxidation resistance at elevated temperatures [2,16,3].…”

2D-Modeling for the temperature-composition dependent thermal-conductivity of AlmNn compounded semiconductor materials

“…It is found that Point-defect and Umklapp scattering are dominant scattering mechanisms for the thermal conductivity of AlN x . The computed thermal conductivity of AlN x in this model is verified through comparison with the experimental data regarding to temperature T in paper [11,12] and [10] and mole fraction x in work [13][14][15][16][17] and [18].…”