Processing Issues in Pulse DC Sputtering of Vanadium Oxide Thin Films for Uncooled Infrared Detectors

Bharadwaja, S. S. N.; Venkatasubramanyam, C.; Fieldhouse, N.; Gauntt, Bryan D.; Lee, Myung Yoon; Ashok, S.; Dickey, Elizabeth C.; Jackson, Thomas N.; Horn, Mark W.

doi:10.1002/9780470930915.ch16

Cited by 4 publications

(1 citation statement)

References 21 publications

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“…À2% per K of IBAD VO x samples 18 as reference; the estimated (a H /n Â V) lies between 5 Â 10 À12 and 5 Â 10 À15 for our nano-twinned samples. These values are significantly smaller than the nanocrystalline VO x samples deposited by pulsed dc sputtering with no substrate bias 21 and are within the range of IBAD samples. Though there have been several attempts to understand the relationship between the material 1/f noise and microstructure in different semiconducting materials, 22,23 a universal understanding of its origin remains unknown.…”

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confidence: 67%

Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

Basantani

Kozlowski

Lee

et al. 2012

Applied Physics Letters

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Thin films of VOx (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VOx samples. The resistivity of nanotwinned VOx films ranged from 4 mΩ·cm to 0.6 Ω·cm and corresponding temperature coefficient of resistance between −0.1% and −2.6% per K, respectively. The 1/f electrical noise was analyzed in these VOx samples using the Hooge-Vandamme relation. These VOx films are comparable or surpass commercial VOx films deposited by ion beam sputtering.

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confidence: 67%

Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

Basantani

Kozlowski

Lee

et al. 2012

Applied Physics Letters

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Sol-gel deposition and characterization of vanadium pentoxide thin films with high TCR

Grayli

Leach

Bahreyni

2018

Sensors and Actuators A: Physical

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Vanadium pentoxide thin films have been deposited on quartz substrates via sol-gel synthesis and dip coating. The process was developed to establish a reliable and inexpensive method to produce thin films with a high temperature coefficient of resistance (TCR) for sensing applications. Sol-gel precursor concentration and post-deposition annealing conditions were varied to address their effects on film composition, morphology, structure, resistivity, and TCR response. The resulting thin films were structurally characterized by thin film profilometry, x-ray diffraction, scanning electron microscopy, and Raman spectroscopy. Resistivity and TCR measurements were carried out to determine their efficacy as sensor materials. Both low and high concentration alkoxide sol-gel precursors led to films of pure α-V2O5 composition but with characteristically different structural and electrical properties. Low concentration films showed a modest decrease in resistivity and TCR with increasing annealing temperature, consistent with the formation of increasing grain size and the coalescence of largely planar grains with common crystalline orientation. In contrast, films fabricated from higher alkoxide precursor

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Potential for reactive pulsed-dc magnetron sputtering of nanocomposite VOx microbolometer thin films

Jin¹,

Özçelik

Horn

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Vanadium oxide (VOx) thin films were deposited by reactive pulsed-dc sputtering a metallic vanadium target in argon/oxygen mixtures with substrate bias. Hysteretic oxidation of the vanadium target surface was assessed by measuring the average cathode current during deposition. Nonuniform oxidization of the target surface was analyzed by Raman spectroscopy. The VOx film deposition rate, resistivity, and temperature coefficient of resistance were correlated to oxygen to argon ratio, processing pressure, target-to-substrate distance, and oxygen inlet positions. To deposit VOx in the resistivity range of 0.1–10 Ω-cm with good uniformity and process control, lower processing pressure, larger target-to-substrate distance, and oxygen inlet near the substrate are useful.

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Processing Issues in Pulse DC Sputtering of Vanadium Oxide Thin Films for Uncooled Infrared Detectors

Cited by 4 publications

References 21 publications

Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

Sol-gel deposition and characterization of vanadium pentoxide thin films with high TCR

Potential for reactive pulsed-dc magnetron sputtering of nanocomposite VOx microbolometer thin films

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