Production, Characterization and Application of Silicon-on-Sapphire Wafers

Pramanik, Alokesh; Liu, Mei; Zhang, Liang Chi

doi:10.4028/www.scientific.net/kem.443.567

Cited by 4 publications

(1 citation statement)

References 32 publications

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“…Hydrogen is attracting attention from the researchers all over the world as it is such a green gas as well as a promising energy source in the foresee future in fossil industry, fuel cell applications, and some other fields like single-crystal silicon producing process. [1][2][3] The main way of producing hydrogen is coal gasification, 4 and as a result hydrogen always accompanied with carbon dioxide is produced. There also a demanding need for hydrogen recovery from purge gas that in most cases hydrogen is accompanied by nitrogen.…”

Section: Introductionmentioning

confidence: 99%

Gas permeation properties of poly(2,5‐benzimidazole) derivative membranes

Jiang

Xiao

Kang

et al. 2014

J of Applied Polymer Sci

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In this article, three novel polymers based on poly(2,5‐benzimidazole) (ABPBI) were synthesized by introducing propyl, isobutyl or n‐butyl groups to its side chain through an alkyl substitution reaction. FTIR and 13C NMR were applied to confirm the formation of corresponding chemical groups. Their physical properties including crystallinity, thermal stability, mechanical strength, and micro‐morphology were also characterized. Their solubility in common solvents were also tested to see if the modification will bring any improvement. Gas permeation properties of three derivative membranes prepared by a casting and solvent‐evaporation method were tested with pure gases including H2, N2, O2, CH4, and CO2. It has been revealed that gas with a smaller molecular size owned a larger permeability. This means gas permeation in all prepared membranes should be diffusivity selective. Among all three modified ABPBI membranes, isobutyl substitution modified ABPBI (IBABPBI) showed the best selectivity of H2 over other gases such as N2 (∼185) and CO2 (∼6.3) with a comparable permeability (∼9.33 barrer) when tested at 35°C and 3.0 atm. Testing temperature increase facilitated gas permeation for all three membranes obviously; while in term of gas selectivity temperature increase showed diverse alteration because it brought variable impact on gas solubility of different gases. Even so, IBABPBI membrane still owned acceptable selectivity of H2 over N2 (∼118) and CO2 (∼6.3) with an almost doubled permeability (∼17.5 barrer) when tested at 75°C and 3.0 atm. Additional tests showed that running at high pressure did not bring any obvious deterioration to gas separation performance of IBABPBI membrane. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014, 131, 40440.

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Section: Introductionmentioning

confidence: 99%

Gas permeation properties of poly(2,5‐benzimidazole) derivative membranes

Jiang

Xiao

Kang

et al. 2014

J of Applied Polymer Sci

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Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide

Lee

Yum

Larsen

et al. 2017

Sci Rep

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Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

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