Productivity potential of an inline deposition system for amorphous and microcrystalline silicon solar cells

Strobel, C.; Zimmermann, T.; Albert, Matthias; Bartha, Johann W.; Kuske, J.

doi:10.1016/j.solmat.2009.04.023

Cited by 20 publications

(13 citation statements)

References 31 publications

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“…The static deposition rate of the intrinsic layer was 0.58 nm/s, the dynamic deposition rate was 4 nm·m/min. We did not find a significant influence of the carrier speed on the solar cell properties, which was attributed to the relatively robust a-Si deposition process [6].…”

Section: Resultsmentioning

confidence: 55%

Inline deposition of microcrystalline silicon solar cells using a linear plasma source

Zimmermann

Strobel

Albert

et al. 2010

Phys. Status Solidi (c)

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In this work we investigate and discuss the influence of a dynamic inline deposition process on the properties of microcrystalline silicon solar cells. A VHF‐PECVD inline deposition system with linear plasma sources working at 81.36 MHz was employed for film preparation. We focused on the dynamic deposition of solar cells at different substrate carrier speeds. The solar cell properties as well as the crystallinity were determined and analyzed. Our best cells so far showed efficiencies of 6.3% at a static deposition rate of 0.43 nm/s. For increasing substrate carrier speeds no negative trend could be observed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 55%

Inline deposition of microcrystalline silicon solar cells using a linear plasma source

Zimmermann

Strobel

Albert

et al. 2010

Phys. Status Solidi (c)

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“…For a homogeneous large area deposition of mc-Si:H a system with VHF linear plasma sources as described in Ref. [11] can be used.…”

Section: Methodsmentioning

confidence: 99%

“…The conductivity was improved when going from 0.5 mbar/SC ¼1%/cTMB ¼1% to 0.2 mbar/SC ¼0.75%/cTMB ¼2.5%. The reference datapoints (black circles) are deposited at another deposition system [11] at 81.36 MHz at a much lower cTMB-value (0.3%). It is commonly accepted that thin (20 nm) mc-Si:H p-layers should exhibit a conductivity of 1.10 À 2 S/cm or better [15].…”

Section: Roadmap To High Rate High Efficiency Lc-si:h P-i-n Solar Cellsmentioning

confidence: 99%

“…In previous work [11,38] it was demonstrated that mc-Si:H i-layers can be deposited homogeneously at large area linear plasma sources. The thickness deviation beneath a 300 mm wide electrode was less than 73%.…”

Section: Large Area Depositionmentioning

confidence: 99%

“…Several methods are possible to ensure a homogeneous large area deposition using such a high frequency, e.g array antenna [8], ladder shaped electrode [9] or linear plasma source [10]. The linear plasma source approach developed at FAP GmbH/TUDresden is well investigated [11] and can be used for a very productive high rate VHF fabrication of mc-Si:H.…”

Section: Introductionmentioning

confidence: 99%

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