Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory

Raghavan, Nagarajan; Frey, Daniel; Pey, K. L.

doi:10.1016/j.microrel.2014.07.072

Cited by 4 publications

(3 citation statements)

References 18 publications

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“…As reported previously, the slope of ≈1.5 is often related to current fluctuations induced by diffusion/migration processes. [61][62][63][64] Such current fluctuations can be directly probed in the time domain, which will be the focus of the latter part of this study. This 1/f 1.5 noise with a larger magnitude suggests that the underlying process of noise at IRSs of 275 K is different compared to 323 K or room temperature cases.…”

Section: Resultsmentioning

confidence: 99%

“…Similar current fluctuations have previously been associated with processes such as charge trapping/ de-trapping at the defects close to the conducting filaments or current fluctuations induced by diffusion/migration of ions, which provided a mechanistic picture towards understanding resistive switching mechanisms in various material-based memory systems. [47,63,64,[67][68][69] Therefore, we proceeded with a detailed analysis of the observed current fluctuations in our perovskite memory devices for the different resistance states by visually representing the distribution of the current levels in the time trace as current histograms (Figure 5b). From the histograms collected from the time trace data over a period of 0.1 s, we can extract the discrete current levels among which the fluctuations occur by determining the major peaks.…”

Section: Resultsmentioning

confidence: 99%

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Resistive Switching by Percolative Conducting Filaments in Organometal Perovskite Unipolar Memory Devices Analyzed Using Current Noise Spectra

Ahn

Kang

Song

et al. 2021

Adv Funct Materials

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Organometal halide perovskites have emerged as potential material systems for resistive memory devices besides their outstanding optical and electrical properties. Although halide-perovskite resistive memory has the advantage of operating with a low voltage and large on/off ratio, random distribution in operation voltage remains a challenge in memory application. This stochastic operation characteristic is due to the random formation of conducting filaments that cause resistance fluctuations in the material. Therefore, it is essential to investigate the formation and dissolution of conducting filaments and their structure. However, direct observation of a nanoscale filamentary structure is often challenging. Moreover, detailed studies of conducting filaments in halide-perovskite materials have rarely been reported. By employing a scaling theory with a fractal structure, this study investigates the geometric structures and dynamics of conducting filaments formed in organometal halide perovskite through current noise analysis. The temperature-dependent electrical properties and current noise demonstrate the role of ion migration in the formation of conducting filaments. The findings could enhance the understanding of the resistive switching phenomena of perovskite resistive memory devices in terms of percolative conducting filaments. Thus, providing a route for achieving a stable memory operation by controlling the relevant structure and dynamics of the switching processes.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Resistive Switching by Percolative Conducting Filaments in Organometal Perovskite Unipolar Memory Devices Analyzed Using Current Noise Spectra

Ahn

Kang

Song

et al. 2021

Adv Funct Materials

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“…The different exponent values indicate different current conduction mechanisms present in the IRSs at a low bias and in the NDR regime at a high bias 13 27 28 . Particularly, the exponent value of 1.5 has been understood as a modulation of the local resistances of the material by a diffusing variable such as a local charge carrier density 27 29 30 .…”

Section: Resultsmentioning

confidence: 99%

Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices

Song

Jeong

Chung

et al. 2016

Sci Rep

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The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade. To address this issue, we investigate the current fluctuations of organic nanocomposite memory devices with NDR and the IRSs under various temperature conditions. The 1/f noise scaling behaviors at various temperature conditions in the IRSs and telegraphic noise in NDR indicate the localized current pathways in the organic nanocomposite layers for each IRS. The clearly observed telegraphic noise with a long characteristic time in NDR at low temperature indicates that the localized current pathways for the IRSs are attributed to trapping/de-trapping at the deep trap levels in NDR. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems.

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Health monitoring and prediction of EEPROM considering program/erase endurance and data retention stress

Yi,

Ma,

Wang

et al. 2025

Microelectronics Reliability

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Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory

Cited by 4 publications

References 18 publications

Resistive Switching by Percolative Conducting Filaments in Organometal Perovskite Unipolar Memory Devices Analyzed Using Current Noise Spectra

Resistive Switching by Percolative Conducting Filaments in Organometal Perovskite Unipolar Memory Devices Analyzed Using Current Noise Spectra

Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices

Health monitoring and prediction of EEPROM considering program/erase endurance and data retention stress

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