Programmable low voltage bandgap reference CMOS compatible

Dilimot, G.; Brezeanu, Gheorghe; Mitu, F.; Enache, I.

doi:10.1109/smicnd.2002.1105871

Cited by 5 publications

(4 citation statements)

References 6 publications

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“…The area required for the programmable band gap reference circuit is estimated to be 0.023mm 2 . The power dissipated and the temperature coefficient of the proposed programmable band gap reference circuit and that corresponding to [7] and [8] are shown in Table 4. From this table, it may be noted that the proposed scheme for sub 1V reference dissipates power on par with the other two schemes though the operating voltage is 3.7 V. The temperature coefficient of this scheme is 7ppm/°C less than that of [8] and 11 ppm/°C more than that of [7].…”

Section: Simulation Resultsmentioning

confidence: 99%

“…However, in order to take care of process variations, the V GS of the diode connected MOSFET is normally fixed below 500mV. Under this condition, the drain current can be expressed in terms of aspect ratio (W/L) using [7] and is given by (1).…”

Section: A Analysis Of Ctat Componentmentioning

confidence: 99%

“…(5) where K B is a negative constant and is given by (6), K B = K T +V GB -V T0 -V OFF (6) where K T is temperature coefficient of threshold voltage, V OFF is offset voltage for higher width MOSFETs. The variation of V GS" with respect to temperature is given by (7).…”

Section: A Analysis Of Ctat Componentmentioning

confidence: 99%

“…The band gap reference discussed in [7] uses the variable current ratios and suitable resistances for programmability. Moreover, this band gap reference uses three operational amplifiers, two as error amplifiers and one as current to voltage converter.…”

Section: Introductionmentioning

confidence: 99%

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A low power programmable band gap reference circuit with subthreshold MOSFETs

Ramasamy

Venkataramani

Meenatchisundaram

2008

TENCON 2008 - 2008 IEEE Region 10 Conference

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In this paper, a novel approach is proposed for the design of Low power CMOS programmable band gap reference circuit. In the literature, an inversion technique is proposed to make the voltage reference to be independent of temperature by using parasitic bipolar transistors. In the above technique, this paper proposes the use of MOSFETs operating in subthreshold region for generating a voltage with negative temperature coefficient. Programmability is proposed for the first time by changing the aspect ratio, the current flowing through diode connected MOSFETs and gain introduced through the inversion technique. To study the performance of the proposed programmable scheme, the band gap reference is implemented in tsmc035 CMOS process with 3.7V power supply. The simulation carried out in Eldo spice indicates that temperature coefficients are 7ppm/·c, 23ppm/·c and 30ppm/·c respectively over the temperature range of -10·c to 120·c for output voltages 0.9V, 1.2V and 1.5V. It dissipates 53µW, 134 µW and 302µW for output voltages 0.9V, 1.2V and 1.5V respectively. The estimated silicon area is 0.023mm 2 .

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Section: Simulation Resultsmentioning

confidence: 99%

Section: A Analysis Of Ctat Componentmentioning

confidence: 99%

Section: A Analysis Of Ctat Componentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A low power programmable band gap reference circuit with subthreshold MOSFETs

Ramasamy

Venkataramani

Meenatchisundaram

2008

TENCON 2008 - 2008 IEEE Region 10 Conference

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A programmable CMOS voltage reference based on a proportional summing circuit

Zhang

Guo

Kong

et al. 2007

2007 7th International Conference on ASIC

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This paper describes a new approach for design and implementation of programmable voltage reference based on current mode bandgap voltage reference and a proportional summing circuit. The circuit is simulated and fabricated with Chartered 0.35um mixed-signal technology, and our measurements demonstrate that its temperature coefficient is ±35.07ppm/°C from 0 to 100°C.The supply voltage is varied from 2.7-5V and the varied voltage reference is about 5mV. Depending on the state of the five VID inputs, an output voltage between 1.075V and 1.85V is programmed in 25mV increments.

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