2019
DOI: 10.7567/1347-4065/ab163b
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Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development

Abstract: Semiconductor device production has grown year on year, with high-volume manufacturing supported by advances in plasma processes. In plasma-based processing, ions and reactive species synergistically enhance chemical reactions, whose kinetics is in a nonequilibrium state in the region of the surface subjected to ion bombardment. To control such processing, methods for process monitoring, equipment control, modeling and simulation, and controlling plasma-induced damage, are required. Here, we conduct a systemat… Show more

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Cited by 10 publications
(7 citation statements)
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“…From the V -I characteristics, T e was calculated according to Maxwell's distribution using the Langmuir probe method. In (1), T e depends on the derivative of the logarithm of electron current (I e ) with respect to the applied probe voltage V , which is given as follows:…”
Section: A Measurement Of Electron Temperature By Langmuir Probe Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…From the V -I characteristics, T e was calculated according to Maxwell's distribution using the Langmuir probe method. In (1), T e depends on the derivative of the logarithm of electron current (I e ) with respect to the applied probe voltage V , which is given as follows:…”
Section: A Measurement Of Electron Temperature By Langmuir Probe Methodsmentioning
confidence: 99%
“…Throughout this process, the plasma must be maintained at the optimal process conditions with carefully adjusted plasma parameters. For advancements in process plasma, it is crucial to control the plasma more precisely and improve the plasma parameter measurement technology [1]. Several methods for measuring plasma levels have been reported, such as the probe method that involves directly inserting a probe into the plasma.…”
Section: Introductionmentioning
confidence: 99%
“…Cost reduction and simplification are expected to be obtained in virtual experiments that require numerical computations based on theories and stored fundamental datasets. 17) Automation of plasma processing has been addressed for a long time. Statistical process control (SPC) was developed in the 1980s 18) and was based on the design of experiments proposed by Taguchi.…”
Section: Plasma Processing In Semiconductor Manufacturingmentioning
confidence: 99%
“…239) The other diagnostics in the semiconductor fabrication were reviewed elsewhere. 240) In addition, the line-of-sight concentrations of atomic nitrogen and NO in an atmospheric air plasma were systematically examined using a combination of the VUVAS and LIF techniques. 241) Plasma chemistry is distinct from combustion chemistry.…”
Section: In Situ Measurements At Multiple Points In Real-timementioning
confidence: 99%