Progress and prospects of GaN-based VCSEL from near UV to green emission

Yu, Hsin-Chieh; Zheng, Zhigang; Mei, Yang; Xu, Rong; Liu, Jian ping; Yang, Hui; Zhang, Bao Ping; Lu, Tse Min; Kuo, Hao‐Chung

doi:10.1016/j.pquantelec.2018.02.001

Cited by 65 publications

(21 citation statements)

References 79 publications

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“…Therefore, significant efforts are required to develop high power, high speed GaN-based VCSELs. The recent advances and challenges of GaN-based VCSELs are summarized in [66]. Nonetheless, the investigation of nonpolar InGaN/GaN quantum-well VCSEL shows a modulation bandwidth beyond GHz [67], confirming the fact that GaN-based VCSEL has great potential for high-speed VLC transmitters.…”

Section: Gan Based Eeld Sld and Vcselmentioning

confidence: 90%

Laser-based visible light communications and underwater wireless optical communications: a device perspective

Shen

Alkhazragi

Sun

et al. 2019

Novel in-Plane Semiconductor Lasers XVIII

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High-speed visible light communications (VLC) has been identified at an essential part of communication technology for 5G network. VLC offers the unique advantages of unregulated and secure channels, free of EM interference. Compared with the LED-based VLC transmitter, laser-based photonic systems are promising for compact, droop-free, and high-speed white lighting and VLC applications, ideal for ultra-fast 5G network and beyond. Besides the potential for achieving high data rate free-space communication links, i.e. the Li-Fi network, laser-based VLC technology can also enable underwater wireless optical communications (UWOC) for many important applications. In this paper, the recent research progress and highlights in the fields of laser-based VLC and UWOC have been reviewed with a focused discussion on the performance of various light sources, including the modulation characteristics of GaNbased edge emitting laser diodes (EELDs), superluminescent diodes (SLDs) and vertical-cavity surface-emitting lasers (VCSELs). Apart from the utilization of discrete components for building transceiver in VLC systems, the development of III-nitride laser-based photonic integration has been featured. Such on-chip integration offers many advantages, including having a small-footprint, high-speed, and low power consumption. Finally, we discuss the considerations of wavelength selection for various VLC and UWOC applications. Comparison of infrared (IR) and visible lasers for channels with high turbulence and the study of ultraviolet (UV) and visible lasers for non-line-of-sight (NLOS) communications are presented.

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Section: Gan Based Eeld Sld and Vcselmentioning

confidence: 90%

Laser-based visible light communications and underwater wireless optical communications: a device perspective

Shen

Alkhazragi

Sun

et al. 2019

Novel in-Plane Semiconductor Lasers XVIII

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“…Also, a −3 dB modulation bandwidth of close to 1 GHz has been reported for nonpolar VCSELs . However, the reported threshold current density and output power are not yet superior to those for c‐ plane VCSELs . Table compares the results of some recent nonpolar electrically pumped VCSELs with c‐ plane reports with various VCSEL designs, including only top dielectric DBR (hybrid) and both bottom/top DBRs.…”

Section: Successes and Challengesmentioning

confidence: 99%

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

Monavarian

Rashidi

Feezell

2018

Phys. Status Solidi A

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The performance of III-nitride devices is degraded by polarization in a wurtzite crystal structure. Nonpolar and semipolar III-nitrides have been extensively studied since the early 2000s as a solution to the polarizationrelated issues. Removal of polarization is expected to improve the radiative efficiency, optical gain, charge transport, and potentially offer solutions to the challenging problems in III-nitride light-emitting diodes (LEDs) known as efficiency droop and the green gap. In addition, use of nonpolar and semipolar orientations is also predicted to offer polarization pinning in some devices due to anisotropic in-plane strain. Despite the many potential advantages over c-plane, nonpolar and semipolar optoelectronic devices have not successfully replaced conventional c-plane devices in the commercial sector. Here, nonpolar and semipolar III-nitrides are reviewed after more than a decade of development. The successes and challenges of nonpolar and semipolar orientations for applications such as LEDs, laser diodes, superluminescent diodes, and vertical-cavity surface emitting lasers are discussed. New potential avenues for nonpolar and semipolar III-nitrides are also highlighted, including visible-light communication and power electronics. The availability of low-cost, high-crystal-quality substrates with nonpolar or semipolar orientation is discussed and alternative approaches for realizing these orientations are presented, including selective-area bottom-up nanostructures.

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“…[ 71,72 ] However, it will make the device hard to be driven electrically. [ 73 ] Besides, GaN epitaxial layers cannot grow directly on the dielectric DBRs due to large lattice mismatch. Hence, extra lifting off and transferring processes are often required for dielectric DBRs, which causes much complexity during production.…”

Section: Distributed Bragg Resonatorsmentioning

confidence: 99%

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

Small

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are even smaller, only a few MHz, which are far away from the requirement of fast and large data wireless transmission for VLC. [5] To enhance the data transmission rates, complex modulation schemes and/ or equalization have to be utilized, which, however, hinder the further developments and applications. In addition, Si-based optoelectronic devices, like Si PDs, a bluefiltering technology are still used currently for shorter wavelength visible light detection, which suffers from complexity and low light transmittance. Furthermore, considering the development and mature application of GaN-based devices, there is a trend to realize the multifunctional single chip integration. However, the relative low coupling efficiency in the GaNbased optoelectronic devices still cannot meet the requirements. In this case, it is important to develop novel GaN-based optoelectronic devices with superior performances as alternative for miniaturization, simplification, and integration. To solve these problems, the concept of incorporating GaN-based devices with exotic optical resonances has been proposed. [5] Surface plasmons (SPs), microcavities, such as whispering gallery modes (WGMs) and distributed Bragg reflectors (DBR) are common optical resonant structures to improve the performances of GaN-based devices. [6][7][8][9] SPs are intrinsic electromagnetic modes excited at the metal-dielectric interfaces, accompanied with the collective oscillation behaviors of free electrons on the metal-side surfaces. [10] Giant electric field enhancement generates at the interface with exponentially decay along the perpendicular direction. Inside the GaN-based devices, the excitation of SPs can greatly enhance the density of states of the electron-hole pairs and improve the competitiveness of the radiative recombination to the non-radiative recombination. [11] It has also been demonstrated tremendously in early works that using SPs enables a path to break the optical diffraction limit of the semiconductor lasers and boost the light-matter coupling intensities in subwavelength dimensions. [11][12][13][14][15][16][17] In addition, GaN-based microcavities, such as photonics crystals, DBR, and micro disks, can confine and manipulate light. [18][19][20] By matching one or more dimensions of the cavities to the wavelength of the confined light, exotic effects can be produced, such as enhanced luminescence, directional emission, low-threshold lasing, etc. When light illuminates microcavities, the confined electron-hole pairs interact with the cavity photons. Their interaction rate relative to the average Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanism...

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Progress and prospects of GaN-based VCSEL from near UV to green emission

Cited by 65 publications

References 79 publications

Laser-based visible light communications and underwater wireless optical communications: a device perspective

Laser-based visible light communications and underwater wireless optical communications: a device perspective

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

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