IEEE Custom Integrated Circuits Conference 2010 2010
DOI: 10.1109/cicc.2010.5617421
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Progress and trends in multi-Gbps optical receivers with CMOS integrated photodetectors

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Cited by 6 publications
(2 citation statements)
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“…This leads to a long-wavelength cut off, λ C , given by Eq. (7). For silicon, this is 1.1 μm, where the absorption coefficient is 1 × 10 1 cm −1 , whereas at 400 nm it is 1 × 10 5 cm −1 .…”
Section: The Photoelectric Effect: Converting Lightmentioning
confidence: 93%
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“…This leads to a long-wavelength cut off, λ C , given by Eq. (7). For silicon, this is 1.1 μm, where the absorption coefficient is 1 × 10 1 cm −1 , whereas at 400 nm it is 1 × 10 5 cm −1 .…”
Section: The Photoelectric Effect: Converting Lightmentioning
confidence: 93%
“…The degree of receiver circuit integration, directly impacts system level costs and performance. Older receivers required separate ICs for the basic receiver tasks discussed in Section 1.1, however increased integration allows higher bandwidths, lower power dissipation and significantly reduced system level design times [7]. As an example, integrating a CDR circuit with the receiver removes high-bandwidth, accurate traces from a printed circuit board (PCB).…”
Section: Integration and Silicon Area Usagementioning
confidence: 99%