Progress in 193-nm top-surface imaging process development

Hutchinson, John M.; Rao, Veena; Zhang, Guojing; Pawloski, Adam R.; Fonseca, Carlos; Chambers, Janet; Holl, Susan M.; Das, Susobhan; Henderson, Craig C.; Wheeler, David R.

doi:10.1117/12.312405

Cited by 16 publications

(8 citation statements)

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“…In interferometric lithography ( Figure 1). a photoresist-coated substrate positioned at the point of intersection undergoes exposure, printing a periodic line-space pattern whose period P is determined by the wavelength of light and the angle of intersection of the beams according to the equation 2sinq (1) where ? is the exposing wavelength and 4) is the angle of incidence of the beams from the normal.…”

Section: Instrumentation For Interferometric Lithography (Il)mentioning

confidence: 99%

Aerial image contrast using interferometric lithography: effect on line-edge roughness

et al. 1999

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Interferometric lithography affords the unique ability to independently control dose, pitch and aerial image contrast during photolithographic exposure. In this report, we describe the use of a deep-UV interferometric lithography exposure tool to study the impact of aerial image contrast on resist imaging properties. A wide range of high resolution resist materials was surveyed, including positive-and negative-tone systems, chemically amplified and conventional diazonaphthoquinone imaging chemistries, and aqueous-and solvent-developed systems. In all cases, resist line-edge roughness was observed to increase as aerial image contrast was decreased, though the precise behavior varied with resist material. Polymer molecular weight was systematically varied in a negative-tone chemically amplified resist formulation. The results indicate that molecular weight is a significant factor influencing the magnitude and type of line-edge roughness at low aerial image contrast.

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Section: Instrumentation For Interferometric Lithography (Il)mentioning

confidence: 99%

Aerial image contrast using interferometric lithography: effect on line-edge roughness

et al. 1999

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“…Step (1) represents the equilibrium between the protonated TBOC protecting groups and phenolic pendent groups.…”

Section: Resultsmentioning

confidence: 99%

“…Steps 3and 4describe direct uncatalyzed thermolysis of PTBOCST [36], reaction pathways that can become significant at high temperature and/or high levels of conversion. Kinetic parameters for steps (1) and 2were extracted from the measured deprotection kinetics of PTBOCST films containing 2.5 wt% TBI-PFBS, uniformly exposed to a high dose at 254 nm and are listed in Table II. These are in good agreement with previously reportedvalues [36].…”

Section: Resultsmentioning

confidence: 99%

“…In this range, acceptable dimensional tolerances begin to approach the length scales of the molecular components and processes in the resist film Linewidth variations that are permissible at larger feature sizes may be completely unacceptable at these small dimensions Two factors are considered to be significant potential sources of linewith variations in the nanoscale regime. Random fluctuations in the width of a resist feature, termed line-edge roughness (LER), is one of these [ 1 ] [2] . Possible sources of LER include the molecular weight and molecular weight distribution of the resist polymer and the molecular structure of resist components [3] [4], inhomogeneity in the distribution of resist components within the film[s], statistical effects influencing film dissolution [6] and intrinsic properties of the imaging chemistry [7].…”

Section: Introductionmentioning

confidence: 99%

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Factors Controlling Pattern Formation in Chemically Amplified Resists at Sub-100 nm Dimensions.

Hinsberg

Houle

Wallraff

et al. 1999

J. Photopol. Sci. Technol.

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At minimum , feature dimensions below 100 nm, the required dimensional tolerances for pattern formation in integrated circuit fabrication approach the length scales of the molecular components and processes typically found in a resist film. This paper summarizes recent experimental work aimed at an improved understanding of photoacid diffusion and line-edge roughness, two key factors that influence dimensional control in chemically amplified resists.

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“…Viable lithographic processes based on single layer resists [1,2] as well as bilayer [3] and top surface imaging [4] resists have been published. The single layer resist systems can generally be divided into two classes: alicyclic and acrylic based on the polymer backbone.…”

Section: Introductionmentioning

confidence: 99%

Recent Advancements In Cycloolefin Based Resists For ArF Lithography.

Byers

Patterson

Cho

et al. 1998

J. Photopol. Sci. Technol.

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This paper reports our work on a series of alicyclic polymer-based photoresist platforms designed for 193 nm lithography. The polymers described here were prepared from derivatives of norbornene and appropriate co-monomers by free radical polymerization. A variety of techniques were explored as a means of enhancing the lithographic, optical, dissolution, and mechanical properties of photoresists formulated from these alicyclic polymers. Recent studies designed to improve the lithographic performance of photoresists formulated with these materials are described. The process lattitude, delay stability and the utility of the resist for pattern transfer of lithographic images into polysilicon were also studied.

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Progress in 193-nm top-surface imaging process development

Cited by 16 publications

References 0 publications

Aerial image contrast using interferometric lithography: effect on line-edge roughness

Aerial image contrast using interferometric lithography: effect on line-edge roughness

Factors Controlling Pattern Formation in Chemically Amplified Resists at Sub-100 nm Dimensions.

Recent Advancements In Cycloolefin Based Resists For ArF Lithography.

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