Progress in extreme ultraviolet mask repair using a focused ion beam

Liang, Ted; Stivers, Alan R.; Livengood, Richard H.; Yan, Pei-yang; Zhang, Guojing; Lo, Fu-Chang

doi:10.1116/1.1319687

Cited by 56 publications

(35 citation statements)

References 9 publications

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“…For the scale below 100 nm, electron-beaminduced deposition (EBID) and electron-beam-induced deposition and etching (EBIE) have also been recently explored for use in fabrication or repair processes (Liang et al ., 2000;Liang and Stivers, 2002). EBID and EBIE are based on the interaction of an electron beam with a solid substrate in the presence of a precursor gases.…”

Section: Introductionmentioning

confidence: 99%

Effect of Electron Beam‐Induced Deposition and Etching Under Bias

et al. 2007

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Electron-beam-induced deposition (EBID) and etching (EBIE) provides a simple way to fabricate or etch submicron or nanoscale structures of various materials in a direct-write (i.e.nonlithographic) fashion. The growth rate or the etch rate are influenced by many factors such as beam energy, beam current, temperature of the substrate material, pressure of the chamber, and geometry of the gas injector etc. The mechanism of EBID and EBIE involves the interaction of the incident electron beam or emitted electron from the target material. The role of these electrons is still not completely understood although the contribution of low energy secondary electrons (SE) has been assumed to be the dominant contributor of EBID and EBIE based on its overlap with the dissociation cross section. We have studied the growth and etching phenomenon under various biasing conditions to investigate how low voltage biasing of the substrate affects secondary electron trajectories and subsequently modifies electron-beam-induced deposition and etching.

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Section: Introductionmentioning

confidence: 99%

Effect of Electron Beam‐Induced Deposition and Etching Under Bias

et al. 2007

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“…[36] A considerable amount of activity has focussed on using the current FIB tools to determine the selectivity between the absorber and repair buffer. Some of the variable include changing the accelerating voltage from 10 to 30 KeV to see any dominant damage to the repair buffer as a function of accelerating voltage.…”

Section: Mask Inspection and Repairmentioning

confidence: 99%

EUVL masks: paving the path for commercialization

Mangat

Hector

2001

SPIE Proceedings

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Optical projection lithography has been the principal vehicle of semiconductor manufacturing for more than 20 years and is marching aggressively to satisfy the needs of semiconductor manufacturers for 100nm devices. However, the complexity of optical lithography continues to increase as wavelength reduction continues to 157nm. Extreme Ultraviolet Lithography (EUVL), with wavelength from 13-14 nm, is evolving as a leading next generation lithography option for semiconductor industry to stay on the path laid by Moore's Law.Masks are a critical part of the success of any technology and are considered to be high risk both for optical lithography and NGL technologies for sub-100nm lithography. Two key areas of EUV mask fabrication are reflective multilayer deposition and absorber patterning. In the case of reflective multilayers, delivering defect free multilayers for mask blanks is the biggest challenge. Defect mitigation is being explored as a possible option to smooth the multilayer defects in addition to optimization of the deposition process to reduce defect density. The mask patterning process needs focus on the defect-free absorber stack patterning process, mask cleaning, inspection and repair. In addition, there is considerable effort to understand by simulations, the defect printability, thermal and mechanical distortions, and nontelecentric illumination, to mention a few. To protect the finished mask from defects added during use, a removable pellicle strategy combined with thermophoretic protection during exposure is being developed. Recent migration to square form factor using low thermal expansion material (LTEM) is advantageous as historical developments in optical masks can be applied to EUV mask patterning. This paper addresses recent developments in the EUV mask patterning and highlights critical manufacturing process controls needed to fabricate defect-free full field masks with CD and image placement specifications for sub-70nm node lithography.No technology can be implemented without establishing the commercial infrastructure. The rising cost seems to be a major issue affecting the technology development. With respect to mask fabrication for commercial availability, a virtual mask shop analysis is presented that indicates that the process cost for EUVL masks are comparable to the high end optical mask with a reasonable yield. However, the cost for setting up a new mask facility is considerably high.

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“…With optical photomasks, the modification with a focused ion beam ͑FIB͒ has proven a successful repair strategy. 9 An ion beam of high energetic Ga + ions with a beam focus diameter down to 5 nm has been successfully used to remove material as well as to deposit material. 10 With optical masks, defects as small as 10 nm have been repaired.…”

Section: Introductionmentioning

confidence: 99%

Nanoimprint lithography stamp modification utilizing focused ion beams

Wanzenboeck

Waid

Bertagnolli

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Nanoimprint lithography (NIL) has been established as a high-throughput technique to fabricate sub-25-nm patterns at a low cost. The fabrication of NIL templates with features in the submicrometer range is currently a bottleneck of the NIL technology. The replication of errors on NIL templates places a major challenge on the reusability of templates. Focused ion beam (FIB) technology is employed to modify prestructured NIL templates. In this work, repair strategies for NIL stamps are discussed. Excess material from stamps has been removed by ion milling. Nanoscale trenches and ultrathin lamellas fabricated with a focused ion beam and their corresponding imprints are presented. It has been confirmed that commercial UV-NIL stamps can be modified by FIB milling and imprinted line patterns were successfully replicated by UV-NIL using the repaired templates. Furthermore, the potential of three-dimensional NIL templates structured by FIB was evaluated. Three-dimensional imprints with features down to 80nm with good structure conformity to the template were demonstrated. The capabilities and limitations of FIB as repair technology for NIL stamps are discussed.

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Progress in extreme ultraviolet mask repair using a focused ion beam

Cited by 56 publications

References 9 publications

Effect of Electron Beam‐Induced Deposition and Etching Under Bias

Effect of Electron Beam‐Induced Deposition and Etching Under Bias

EUVL masks: paving the path for commercialization

Nanoimprint lithography stamp modification utilizing focused ion beams

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