Progress in high-luminance LED technology for solid-state lighting

Bhardwaj, J. K.; Cesaratto, J. M.; Wildeson, Isaac H.; Choy, H.Y.; Tandon, Ashish; Soer, Wouter; Schmidt, Peter J.; Spinger, Benno; Deb, Parijat; Shchekin, O.B.; Götz, Werner

doi:10.1002/pssa.201600826

Cited by 34 publications

(19 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The P2G3‐50 can withstand a blue laser power density up to 12.91 W mm −2 , and shows a high luminous flux of 1076 lm, CIE color coordinates of (0.300, 0.305), CRI of 70, CCT of 7643 K, and a luminous efficiency of 166.05 lm W −1 . And the corresponding luminance value is 773 Mcd m −2 , which is around 13 times higher than that of the current high‐power LEDs (≈60 Mcd m −2 ) . As to P2G3‐70, its threshold value of luminescence saturation (11.83 W mm −2 ) is a little lower than that of P2G3‐50 due to the increasing thickness.…”

Section: Resultsmentioning

confidence: 79%

A Thermally Robust La₃Si₆N₁₁:Ce‐in‐Glass Film for High‐Brightness Blue‐Laser‐Driven Solid State Lighting

You

Zheng

et al. 2018

Laser & Photonics Reviews

View full text Add to dashboard Cite

Color converter is a key luminescent material in the laser‐driven solid state lighting, which must bear high‐density excitation and serious thermal attack from the incident laser. Here, a thermally robust yellow‐emitting La3Si6N11:Ce‐in‐glass (LSN:Ce‐PiG) film for laser lighting is reported by co‐firing the LSN:Ce and glass powders on a thermally conductive sapphire substrate. No detectable interfacial reaction occurs between the LSN:Ce particle and glass matrix, enabling the film to fully inherit the original thermal robustness and high quantum efficiency. The optical performance of LSN:Ce‐PiG‐converted white laser light has been effectively optimized by changing the phosphor‐to‐glass (PtG) ratio and the film thickness. The highest light conversion efficiency is respectively achieved at PtG = 2:3 and the thickness of 70 µm, and the saturation threshold is found to decrease with either a higher PtG ratio or a thicker film. The optimized LSN:Ce‐PiG film (P2G3‐50) can withstand a maximum laser power density of 12.91 W mm−2 and produce a cool white light with a high luminous flux of 1076 lm (luminance of 773 Mcd m−2), a luminous efficiency of 166.05 lm W−1, a color rendering index of 70. These results make the LSN:Ce‐PiG film a considerably promising color converter for laser lighting.

show abstract

Section: Resultsmentioning

confidence: 79%

A Thermally Robust La₃Si₆N₁₁:Ce‐in‐Glass Film for High‐Brightness Blue‐Laser‐Driven Solid State Lighting

You

Zheng

et al. 2018

Laser & Photonics Reviews

View full text Add to dashboard Cite

show abstract

“…Figure 6a,b show the two-dimensional polar plot of the electric field intensity of FFP on the upper hemisphere for the nanorod radius of 150 and 200 nm, respectively. The angular distribution was averaged over source position and polarization direction, according to Equation (3). It was also spectrally averaged, according to Equation (1).…”

Section: Resultsmentioning

confidence: 99%

“…Since the first demonstration of GaN-based light-emitting diodes (LEDs) in the early 1990s, there has been remarkable progress in GaN-based LEDs over the last two decades [1][2][3][4]. The efficiency of blue LEDs has been improved to a level that allows for the LED-based solid-state lighting to rapidly replace conventional light bulbs.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations

Ryu

2018

Crystals

View full text Add to dashboard Cite

Light extraction efficiency (LEE) of GaN-based nanorod blue light-emitting diode (LED) structures is investigated using finite-difference time-domain (FDTD) simulations. When the LEE is calculated for different source positions inside the nanorod, the LEE is found to depend strongly on the source positions and the polarization directions for each source position, implying that the LEE of nanorod LED structures should be evaluated by averaging over source positions and polarization directions for determining the LEE accurately. The averaged LEE of nanorod LED structures is simulated as the radius, the p-GaN thickness, and the n-GaN thickness is varied, and the optimum structural parameters can be obtained. In addition, the far-field pattern is simulated when considering the averaging effects, and the circularly symmetric and uniform emission distribution is obtained.

show abstract

“…For the traditional III-Nitride-based LEDs, the maximum EQE exceeds 84% [ 341 ], while high power LEDs offer a luminance level of 60 Mnit and blue-laser-based phosphor-converted white sources enable a luminance above 800 Mnit [ 342 ]. To resolve the efficiency issue of impurity-doped nanocrystal LEDs, the introduction of current state-of-the-art concepts from III-Nitride-based LEDs (e.g., solving critical challenges related to material quality, light extraction, and internal quantum efficiency) may be helpful in the anticipated future [ 343 , 344 , 345 , 346 ].…”

Section: Discussionmentioning

confidence: 99%

Emergence of Impurity-Doped Nanocrystal Light-Emitting Diodes

Luo

Wang

Qiu³

et al. 2020

Nanomaterials

View full text Add to dashboard Cite

In recent years, impurity-doped nanocrystal light-emitting diodes (LEDs) have aroused both academic and industrial interest since they are highly promising to satisfy the increasing demand of display, lighting, and signaling technologies. Compared with undoped counterparts, impurity-doped nanocrystal LEDs have been demonstrated to possess many extraordinary characteristics including enhanced efficiency, increased luminance, reduced voltage, and prolonged stability. In this review, recent state-of-the-art concepts to achieve high-performance impurity-doped nanocrystal LEDs are summarized. Firstly, the fundamental concepts of impurity-doped nanocrystal LEDs are presented. Then, the strategies to enhance the performance of impurity-doped nanocrystal LEDs via both material design and device engineering are introduced. In particular, the emergence of three types of impurity-doped nanocrystal LEDs is comprehensively highlighted, namely impurity-doped colloidal quantum dot LEDs, impurity-doped perovskite LEDs, and impurity-doped colloidal quantum well LEDs. At last, the challenges and the opportunities to further improve the performance of impurity-doped nanocrystal LEDs are described.

show abstract

Progress in high-luminance LED technology for solid-state lighting

Cited by 34 publications

References 17 publications

A Thermally Robust La₃Si₆N₁₁:Ce‐in‐Glass Film for High‐Brightness Blue‐Laser‐Driven Solid State Lighting

A Thermally Robust La₃Si₆N₁₁:Ce‐in‐Glass Film for High‐Brightness Blue‐Laser‐Driven Solid State Lighting

Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations

Emergence of Impurity-Doped Nanocrystal Light-Emitting Diodes

Contact Info

Product

Resources

About

Progress in high-luminance LED technology for solid-state lighting

Cited by 34 publications

References 17 publications

A Thermally Robust La3Si6N11:Ce‐in‐Glass Film for High‐Brightness Blue‐Laser‐Driven Solid State Lighting

A Thermally Robust La3Si6N11:Ce‐in‐Glass Film for High‐Brightness Blue‐Laser‐Driven Solid State Lighting

Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations

Emergence of Impurity-Doped Nanocrystal Light-Emitting Diodes

Contact Info

Product

Resources

About

A Thermally Robust La₃Si₆N₁₁:Ce‐in‐Glass Film for High‐Brightness Blue‐Laser‐Driven Solid State Lighting

A Thermally Robust La₃Si₆N₁₁:Ce‐in‐Glass Film for High‐Brightness Blue‐Laser‐Driven Solid State Lighting