Progress in III-nitrides: Process issue and purity perspective

Abstract

The growth of good quality layers of gallium nitride (GaN) as suitable for epitaxial growth is of great technological importance. Chloride vapour phase epitaxy (Cl-VPE) has been employed to grow good quality layers of GaN. The grown layers have been extensively characterized for their structural and optical properties. MOVPE grown GaN layers have been used to address process issues on device structuring and fabrication. GaN samples with different transition metal dopants have been synthesized and their usefulness as semi-magnetic materials, which are also identified as dilute magnetic semiconductors (DMS), have been evaluated. Better results have been obtained on the magnetic characteristics of GaN with ruthenium as the dopant. Nano dimensional structures of GaN have been obtained with excellent control of the growth parameters.

A comparative study regarding effects of interfacial ferroelectric Bi4Ti3O12 (BTO) layer on electrical characteristics of Au/n-Si structures

“…Consequently, performance of ferroelectric based memory devices is affected by MFS structure and its electrical characteristics. Therefore, over the past years, researchers have also focused on electrical characteristics of MFS structures (Kumar 2005;Wang and Ren 2005;Altındal et al 2008).…”