Progress in rectifying-based RRAM passive crossbar array

Abstract

Resistive random access memory (RRAM) with crossbar structure is receiving widespread attentions due to its simple structure, high density, and feasibility of three-dimensional (3D) stack. It is an extremely promising solution for high density storage. However, a major issue of crosstalk restricts its development and application. In this paper, we will first introduce the integration methods of RRAM device and the existing crosstalk phenomenon in passive crossbar array, and then focus on the 1D1R (one diode and one resistor) structure and self-rectifying 1R (one resistor) structure which can restrain crosstalk and avoid misreading for the passive crossbar array. The test methods of crossbar array are also presented to evaluate the performances of passive crossbar array to achieve its commercial application in comparison with the active array consisting of one transistor and one RRAM cell (1T1R) structure. Finally, the future research direction of rectifying-based RRAM passive crossbar array is discussed. rectification, passive crossbar array, RRAM, 1D1R, self-rectifying Citation:

Cyber–Physiochemical Interfaces

“…However, most functional units (sensors, memory, and display units) show approximately linear current–voltage characteristics, which cannot be directly integrated into the crossbar configuration without any amendments due to the crosstalk issue . This crosstalk issue is derived from the sneak path currents from neighboring pixels in the crossbar array, which can lead to the readout or other errors (Figure a) . To resolve this, an electronic switch, also known as access device, is often connected in series with a functional unit in each pixel of the crossbar array (Figure b) .…”

Rectifying resistance-switching behaviour of Ag/SBTO/STMO/ $$\hbox {p}^{+}$$ p + -Si heterostructure films

“…However, there are fewer materials with self-rectifying characteristics, and which do not have good performance and stability [5,6]. So, the self-rectifying effects can be obtained by constructing diode with metalsemiconductor junction (Schottky barrier), homogeneous or heterogeneous pn junction [7]. In recent years, it was reported that the resistive-switching behaviour was found in SrTiO 3 [8] and Fe-doped SrTiO 3 films [9], which shows bipolar resistive switching.…”

Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM

“…New devices and architectures are expected to propel the development of semiconductor industry for the next several years. Two-terminal resistive random access memory (ReRAM, also called memristive device or memristor) has attracted increasing attention as a suitable alternative to traditional devices [1][2][3][4]. In such a device, a conduction path which has large nonvolatile resistance change is sandwiched between top and bottom electrode.…”