Progress in the analysis of defect structures with endor spectroscopy

Niklas, J. R.

doi:10.1080/00337578308218625

Cited by 13 publications

(3 citation statements)

References 36 publications

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“…l ) , in one degree steps, starting along the three-fold axis (0") and ending along a two-fold axis (90"). Special software algorithms were used to enhance the signal to noise ratio, increase the spectral resolution of the ENDOR data, and automatically determine the positions of peaks in the spectra for the different angles [9].…”

Section: Methodsmentioning

confidence: 99%

Electron Nuclear Double Resonance of the Trapped Hole Center in α‐Al₂O₃:Mg²⁺

DuVarney

Niklas

Spaeth

1985

Physica Status Solidi (b)

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The superhyperfine (shf) interactions of trapped hole centers with 27A1 neighbor nuclei in cr-Al,O, doped with Mg2+ are resolved with electron nuclear double resonance (ENDOR). The hole is localized a t an 0,-ion. With electron nuclear triple resonance (double ENDOR) i t could be established that one of the two next nearest neighbor A13+ ions is missing, but no ENDOR lines due to a Mg2+ impurity can be identified. The isotropic shf interaction constants of the nearest and next nearest Al3+ neighbors are negative. The shf interactions are quantitatively interpreted by taking into account transferred exchange polarization a t the oxygen ion. From this, it seems more likely than not that the AP+ vacancy is filled by a Mgz+ ion.Mit Elelctronen-Kern-Doppelresonanz (ENDOR) werden die Superhyperfein(shf)-Wechselwirkungen von Lochzentren mit 27Al-Nachbarn in mit Mg2+ dotiertem a-Al,O, aufgelost. Das Loch ist an einem 02--Ion lokalisiert. Mit Elektronen-Kern-Tripelresonanz (Doppel-ENDOR) kann gezeigt werden, daB einer der beiden iiberniichsten A13+-Nachbarn fehlt, jedoch konnen keine ENDOR-Linien von Mg2+-Ionen identifiziert werden. Die isotropen shf-Konstanten der nachsten und iiberniichsten AP+-Nachbarn sind negativ. Die shf-Wechselwirkungen werden quantitativ unter Beriicksichtigung von ubertragener Austauschpolarisation am Sauerstoff-Ion erkliirt. Danach ist es wahrscheinlich, daf3 die AP+-Leerstelle mit Mg2+ besetzt ist.

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Section: Methodsmentioning

confidence: 99%

Electron Nuclear Double Resonance of the Trapped Hole Center in α‐Al₂O₃:Mg²⁺

DuVarney

Niklas

Spaeth

1985

Physica Status Solidi (b)

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“…The computercontrolled spectrometer and details of the measurement technique were described elsewhere (Niklas 1983a, b). Special software algorithms were used to enhance the signal-to-noise ratio, to increase the spectral resolution of the ENDOR data and to determine the peak positions of ENDOR lines (Niklas 1983a).…”

Section: Methodsmentioning

confidence: 99%

V³⁺centres in GaAs and GaP: an ENDOR investigation

Hage¹,

Niklas²,

Spaeth³

1989

Semicond. Sci. Technol.

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V3+ impurity centres in GaAs and GaP were investigated with electron nuclear double resonance (ENDOR) spectroscopy. The hyperfine interactions with the 5'V impurity nucleus and several shells of As, P and Ga neighbours as well as quadrupole interactions could be determined accurately. An undistorted tetrahedral symmetry was found for V3' in both crystals. The electron spin is S= 1. From the interpretation of the hyperfine and quadrupole data it is concluded that V3+ is on a substitutional Ga site. A reinterpretation of published EPR/ENDOR data on F$& centres in GaAs and GaP shows that also Fe3+ is on a substitutional Ga site and not interstitial as claimed previously. The distribution and localisation of unpaired spin density is discussed and compared with theoretical expectations.

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“…The digital filters conserve the first and second moments of the lines. Often deconvolution procedures are needed when too many ENDOR lines overlap [16].…”

Section: The Arsenic Antisite and El2mentioning

confidence: 99%

Electron nuclear double resonance (ENDOR) spectroscopy of the EL2 defect in GaAs

Meyer

1988

Rev. Phys. Appl. (Paris)

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2014 L'étude du défaut EL2 dans GaAs semi-isolant par spectroscopie ENDOR détectée optiquement (ODENDOR) montre que ce défaut est dû à une paire d'antisite arsenic-interstitiel arsenic, AsGa-Asi. Les paramètres d'interaction hyperfine ainsi que la symétrie des premiers et deuxièmes voisins et de l'interstitiel ont été analysés. L'interprétation quantitative de l'interaction quadrupolaire permet de déduire le site et l'état de charge de l'interstitiel d'arsenic. Abstract. 2014 Optically detected electron nuclear double resonance (ODENDOR) experiments in semiinsulating GaAs show that the As-antisite ESR spectrum is due to an arsenic antisite-As interstitial pair. The interaction parameters and symmetry of the nearest and next nearest As-ligands and of the single interstitial As atom were analysed. From a quantitative interpretation of the quadrupole interaction parameters the place and charge state of the interstitial As can be inferred.

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Progress in the analysis of defect structures with endor spectroscopy

Cited by 13 publications

References 36 publications

Electron Nuclear Double Resonance of the Trapped Hole Center in α‐Al₂O₃:Mg²⁺

Electron Nuclear Double Resonance of the Trapped Hole Center in α‐Al₂O₃:Mg²⁺

V³⁺centres in GaAs and GaP: an ENDOR investigation

Electron nuclear double resonance (ENDOR) spectroscopy of the EL2 defect in GaAs

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Progress in the analysis of defect structures with endor spectroscopy

Cited by 13 publications

References 36 publications

Electron Nuclear Double Resonance of the Trapped Hole Center in α‐Al2O3:Mg2+

Electron Nuclear Double Resonance of the Trapped Hole Center in α‐Al2O3:Mg2+

V3+centres in GaAs and GaP: an ENDOR investigation

Electron nuclear double resonance (ENDOR) spectroscopy of the EL2 defect in GaAs

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Electron Nuclear Double Resonance of the Trapped Hole Center in α‐Al₂O₃:Mg²⁺

Electron Nuclear Double Resonance of the Trapped Hole Center in α‐Al₂O₃:Mg²⁺

V³⁺centres in GaAs and GaP: an ENDOR investigation