Progress in the room-temperature optical functions of semiconductors

Djurišić, Aleksandra B.; Chan, Y.; Li, E. Herbert

doi:10.1016/s0927-796x(02)00063-3

Cited by 92 publications

(41 citation statements)

References 310 publications

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“…To determine the CP energies from DF for layer or layered semiconductor structures, several models were developed as Harmonic Oscillator (HOA) and Effective-Medium Approximation (EMA). [19] For analyzing the suitable CP energies, Yoon et al suggested that the associated optical properties of the grown layer can be considered as the characteristics of bulk material, if the layer thickness is over the critical thickness. [20] As the thickness of the top layer of our samples was more than 1 µm, we, therefore, used the procedure shown below for the evaluation of ellipsometric data.…”

Section: Resultsmentioning

confidence: 99%

Effect of different P/As ratio on the optical and structural properties of GaAs_1−xP_x/GaAs

Çetin

Kınacı

Asar

et al. 2010

Surface & Interface Analysis

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The GaAs 1−x P x /GaAs ternary alloys were grown on n-GaAs (100) substrate with different P/As flux ratio by solid source molecular beam epitaxy (MBE) system using GaP decomposition source. In order to obtain smooth interface and lattice mismatch structures we have used both continuous growth (CG) and graded growth (GG) methods. The range of lattice parameters in the graded epilayer and phosphorous composition in the samples were determined by the high-resolution X-ray diffraction (HRXRD) rocking curve simulation. The critical energy points of the interband transition edges of the structures were determined by line-shape analyses on their dielectric functions (DF) using spectroscopic ellipsometry (SE) measurements at a room temperature in the 0.5-5 eV photon energy region. Also, surface and interface phenomenon of the structures were discussed by using ellipsometric data. Phosphorous compositions of the ternary alloys were also calculated by photoluminescence (PL) emission peak positions at room temperature and using the bowing parameter obtained by fitting to critical points.

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Section: Resultsmentioning

confidence: 99%

Effect of different P/As ratio on the optical and structural properties of GaAs_1−xP_x/GaAs

Çetin

Kınacı

Asar

et al. 2010

Surface & Interface Analysis

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“…The energy band gaps of above alloys increases rapidly leading to a strong disorder when a small amount of Gallium atoms in GaAs is replaced by Al and when small amount of In atoms are replaced by Al and when small amount of As atoms are replaced by p. This occurs due to the large disparity in the electro negativity and the atomic size between Al and Ga in Al x Ga 1-x As, between Al and In in Al x In 1-x As and between As and P in GaAs 1-x P x . The Al atom and P atom induces several perturbations in the host crystal of above alloys (Djurišić, 2002).…”

Section: Resultsmentioning

confidence: 99%

Research in physical properties of AlxGa1-xAs III-V Arsenide ternary semiconductor alloys

Srivani¹,

Murthy²,

Raghavaiah³

2014

Int. J. Phys. Sci.

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General description of III-Arsenide semiconductors is presented and significance of the present work is stressed. The electrical and optical properties of III-Arsenide from binary semiconductors are evaluated using the principle of additivity involving quadratic expressions. The electrical and optical properties studied in this group include refractive index, optical polarizability, absorption coefficient and energy gap. A comparison of these data is made with reported data wherever available. The significance of the present method developed from refractive indices with out need for sophisticated experimental methods is stressed. The advantage of this group alloys is also outlined.

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“…To determine the CP energies from DF for a layer or layered semiconductor structures several models were developed through Harmonic Oscillator Approximation (HOA) and Effective-Medium Approximation (EMA), which are reviewed in Ref. [6]. For analyzing the suitable CP energies for thick epitaxial layers, Yoon et al suggested that the associated optical properties of the grown layer can be considered as the characteristics of bulk material, if the layer thickness is over the critical thickness [7].…”

Section: Introductionmentioning

confidence: 99%

New method and treatment technique applied to interband transition in GaAs1−x Px ternary alloys

et al. 2011

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Abstract:In this paper we presented a new method (Eigen-Coordinates (ECs)) that can be used for calculations of the critical points (CPs) energy of the interband-transition edges of the heterostructures. This new method is more accurate and complete in comparison with conventional ones and has a wide range of application for the calculation of the fitting parameters related to nontrivial functions that initially have nonlinear fitting parameters that are difficult to evaluate. The new method was applied to determine the CPs energies from the dielectric functions of the MBE grown GaAs 1− P ternary alloys obtained using spectroscopic ellipsometry (SE) measurements at room temperature in the 0.5-5 eV photon energy region. The obtained results are in good agreement with the results of the other methods. 07.60.Fs, 81.15.Hi, 78.66.Fd, 73.61.Jc, 71.20 PACS (2008):

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Progress in the room-temperature optical functions of semiconductors

Cited by 92 publications

References 310 publications

Effect of different P/As ratio on the optical and structural properties of GaAs_1−xP_x/GaAs

Effect of different P/As ratio on the optical and structural properties of GaAs_1−xP_x/GaAs

Research in physical properties of AlxGa1-xAs III-V Arsenide ternary semiconductor alloys

New method and treatment technique applied to interband transition in GaAs1−x Px ternary alloys

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Progress in the room-temperature optical functions of semiconductors

Cited by 92 publications

References 310 publications

Effect of different P/As ratio on the optical and structural properties of GaAs1−xPx/GaAs

Effect of different P/As ratio on the optical and structural properties of GaAs1−xPx/GaAs

Research in physical properties of AlxGa1-xAs III-V Arsenide ternary semiconductor alloys

New method and treatment technique applied to interband transition in GaAs1−x Px ternary alloys

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Effect of different P/As ratio on the optical and structural properties of GaAs_1−xP_x/GaAs

Effect of different P/As ratio on the optical and structural properties of GaAs_1−xP_x/GaAs