A simple, single-color method for permanent marking of the position of individual self-assembled semiconductor Quantum Dots (QDs) at cryogenic temperatures is reported. The method combines in situ photolithography with standard micro-photoluminescence spectroscopy. Its utility is proven by a systematic magnetooptical study of a single CdTe/ZnTe QD containing a Mn 2+ ion, where a magnetic field of up to 10 T in two orthogonal, Faraday and Voigt, configurations is applied to the same QD. The presented approach can be applied to a wide range of solid state nanoemitters.PACS numbers: 75.50. Pp, 75.30.Hx, 78.20.Ls, 71.35.Ji Semiconductor quantum dots (QDs) hold great potential for valuable applications in modern optoelectronics.For instance, they act as optically 1,2 or electrically 3 pumped, highly efficient on-demand singlephoton sources for possible applications in, e.g., quantum information processing schemes.4 As demonstrated recently, 5-9 embedding a magnetic dopant (e.g., a Mn or Co ion) in the QD further enhances its potential for device implementations. Thanks to the s,p-d exchange coupling between a magnetic ion and the carriers confined to the QD, an efficient all-optical manipulation 7-9 and readout 5-9 of the ion's spin projection becomes possible, a milestone in the development of the emerging field of solotronics, that is electronics exploiting quantum properties of individual electrons, ions or defects.
9,10Since QDs are typically randomly distributed in a semiconductor matrix, permanent marking of their position is an indispensable prerequisite for fabrication of any kind of functional device, as well as for any systematic research involving QDs. Several approaches have been utilized so far for high accuracy positioning of individual solid-state nano-emitters, such as QDs or luminescent nanocrystals.11-18 The most efficient ones combined either in situ optical lithography with microphotoluminescence (µ-PL) 13 or, offering even higher spatial resolution, in situ electron beam lithography with cathodoluminescence.18 The optical method (Ref. 13) involved two laser beams of different wavelengths (twocolor method ). The first beam served for determination of the position of the selected QD through µ-PL mapping. Its energy was low enough to avoid exposure of a positive photoresist film deposited on the sample surface. The second laser beam, sharing the same optical path as the first one and of energy high enough to expose the photoresist, was switched on once the QD position was determined. As a result, a mark centered above the selected QD was obtained on the sample surface after the photoresist development. The method has proved its extraordinary efficiency for the production of deterministically coupled (In,Ga)As/GaAs QD -microcavity optical mode devices. 13,19,20 The performance of the method is still limited, however, by the necessity of a precise alignment of the two laser beams and of an overlap of their focused spots on the sample surface. In this letter, we present a scalable method for the pho...