Propagation characteristics at Ga-Si interface: A phase-plane analysis

Abstract

A Model for achieving a large optical nonlinearity via ultrashort laser pulse induced phase transformation in Ga-Si nanostructures has been developed.The soliton solutions of nonlinear Schrodinger equation for Ga-Si switch on the tip of an optical fiber are obtained using phase plane analysis. Solutions show that light induced phase transformations give rise to the change in nonlinear response of the film which has been studied theoretically.