Properties and Characterization of Dielectric Thin Films

Bange, K.; Ottermann, C.; Anderson, O.

doi:10.1007/978-3-662-03475-0_4

Cited by 2 publications

(3 citation statements)

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“…This is due to the film structure and the lower packing density at the film-air interface. A summary of properties is given by Bange (Bange 1997). Ta20 5 : Tantalum oxide shows a wide spectral range of high transparency, low losses and high stability.…”

Section: Important Materialsmentioning

confidence: 99%

“…W03: Tungsten oxide films are prepared by thermal evaporation (Hussain 1999) or DC reactive magnetron sputtering. A summary of properties is given by Bange (Bange 1997). SiON: Produced by dual ion beam sputtering (Brunet-Bruneau et al 1996) or reactive magnetron sputtering of Si in an atmosphere of oxygen and nitrogen (Pinard and Mackowski 1997).…”

Section: Important Materialsmentioning

confidence: 99%

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Coating Materials

Friz

Waibel

2003

Springer Series in Optical Sciences

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Section: Important Materialsmentioning

confidence: 99%

Section: Important Materialsmentioning

confidence: 99%

Coating Materials

Friz

Waibel

2003

Springer Series in Optical Sciences

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“…In this work, ATO thin films are deposited by spray pyrolysis to use as transparent electrodes 19 . The experimental parameters such as temperature, dopant concentration, deposition distance, and post-treatment at different atmospheres are varied to study their effect on the ATO thin films' structural, electrical, and optical properties 20,21 . This is the first report for the systematic investigation of ATO thin films by varying all these parameters together.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Properties of Antimony Doped Tin Oxide Thin Films Obtained by Spray Pyrolysis

et al. 2022

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Antimony doped tin oxide (ATO) thin films are deposited on corning glass substrate using the spray pyrolysis technique. The experimental parameters such as distance between the substrate and source (10-30 cm), substrate temperature (350-450°C) and atmospheres (Nitrogen and Forming gas) are varied to study their effect on the properties of ATO thin films. The ATO thin film annealed at 425°C exhibits the lowest electrical resistivity of 2.23×10 -2 Ω-cm. Besides, the film annealed in the nitrogen atmosphere showed a less resistivity value of 9.06×10 -3 (Ω-cm) than the forming gas atmosphere. The film doped with 3 at% of Sb revealed the highest figure of merit value of 11.45x10 -2 Ω -1 . The preferential orientation is observed at the (200) diffraction plane in all the cases from the structural studies. Furthermore, the intensity of the diffraction planes decreases as the temperature increases. The average transmittance of 75% is obtained for ATO thin films.

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Properties and Characterization of Dielectric Thin Films

Cited by 2 publications

References 308 publications

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Optoelectronic Properties of Antimony Doped Tin Oxide Thin Films Obtained by Spray Pyrolysis

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