Properties and characterization of low-temperature amorphous PECVD silicon nitride films for solar cell passivation

Ali, Sharafat; Gharghi, Majid; Sivoththaman, Siva; Zeaiter, K.

doi:10.1007/s10853-005-0585-z

Cited by 15 publications

(9 citation statements)

References 10 publications

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“…This is because of influence of neighboring atoms on frequencies of valence modes of Si-H and N-H bonds. It should be noted that Ali with coworkers [9] have also observed the shift of the position of N-H valence vibration peak versus stoichiometry of SiN x :H films.…”

Section: Resultsmentioning

confidence: 77%

Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

Bugaev

Zelenina

Володин

2012

International Journal of Spectroscopy

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Vibrational properties of hydrogenated silicon-rich nitride (SiN x :H) of various stoichiometry (0.6 ≤ x ≤ 1.3) and hydrogenated amorphous silicon (a-Si:H) films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130 • C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si-H bonds. From analysis of the FTIR data of the Si-N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si-H chemical species, and films with hydrogen concentration 30-35% contain mainly Si-H 2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

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Section: Resultsmentioning

confidence: 77%

Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

Bugaev

Zelenina

Володин

2012

International Journal of Spectroscopy

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“…The deposition rates obtained at the plasma power of 100W were higher than those of the low-temperature SiN x films deposited from SiH 4 and NH 3 [6]. A higher power would more readily produce energetic radicals, which would accelerate the network formation on the growing surface.…”

Section: Resultsmentioning

confidence: 86%

High‐rate, low‐temperature deposition of multifunctional nano‐crystalline silicon nitride films

Hwang

Lee

Keum

et al. 2010

Journal of Information Display

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The solid phase compositions and dielectric properties of silicon nitride (SiN x ) films prepared using the plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature (200°C) were studied. Controlling the source gas mixing ratio, R = [N 2 ]/[SiH 4 ], and the plasma power successfully produced both silicon-rich and nitrogen-rich compositions in the final films. The composition parameter, X, varied from 0.83 to 1.62. Depending on the film composition, the dielectric properties of the SiN x films also varied substantially. Silicon-rich silicon nitride (SRSN) films were obtained at a low plasma power and a low R. The photoluminescence (PL) spectra of these films revealed the existence of nano-sized silicon particles even in the absence of a post-annealing process. Nitrogen-rich silicon nitride (NRSN) films were obtained at a high plasma power and a high R. These films showed a fairly high dielectric constant (κ = 7.1) and a suppressed hysteresis window in their capacitance-voltage (C-V) characteristics.

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“…Second, the slight ion bombardment will introduce interfacial defects between the semiconductor and the insulator. [34][35][36] Post-PECVD annealing has been found to greatly improve the interfaces and insulators properties through reordering and removal of hydrogen content. 35,36 Kim et al performed a very similar comparison of ALD Al 2 O 3 and PECVD SiO 2 passivation, using SiGe as the substrate.…”

Section: Resultsmentioning

confidence: 99%

Comparison of Dual-Stack Dielectric Field Plates on β-Ga₂O₃ Schottky Rectifiers

Carey

Yang

Ren

et al. 2019

ECS J. Solid State Sci. Technol.

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The effects of bilayer field plates with various dielectric (SiO 2 /SiN x , Al 2 O 3 / SiN x , HfO 2 / SiN x) on Ga 2 O 3 Schottky rectifier performance were investigated. The rectifiers were fabricated on 10 μm thick, Si doped (n = 2.8 × 10 16 cm −3) β-Ga 2 O 3 epitaxial layers grown by hydride vapor phase epitaxy on Ga 2 O 3 Sn-doped substrates (n = 4.8 × 10 18 cm −3) grown by edge-defined, film-fed growth. Temperature-dependent forward current-voltage characteristics were used to extract the average Schottky barrier height of 1.14 eV ± 0.03 eV for Ni, average ideality factor of 1.02 ± 0.02, and the Richardson's constant of 48.1 A/cm 2 K 2. The reverse breakdown and leakage current were the two characteristics predominantly affected by the field plate dielectrics. The highest reverse breakdown reached was 730 V for rectifiers with Al 2 O 3 / SiN x , which was significantly higher than 562 V and 401 V for rectifiers with SiO 2 / SiN x and HfO 2 / SiN x , respectively. The on-resistance ranged from 3.8-5.0 × 10 −3-cm 2 , which was dependent on diode size, with diameters from 50 to 200 μm. This led to a power figure-of-merit (V B 2 /R ON) of 140 MW-cm 2. Design of the field plate is crucial in determining where reverse breakdown occurs.

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Properties and characterization of low-temperature amorphous PECVD silicon nitride films for solar cell passivation

Cited by 15 publications

References 10 publications

Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

High‐rate, low‐temperature deposition of multifunctional nano‐crystalline silicon nitride films

Comparison of Dual-Stack Dielectric Field Plates on β-Ga₂O₃ Schottky Rectifiers

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Properties and characterization of low-temperature amorphous PECVD silicon nitride films for solar cell passivation

Cited by 15 publications

References 10 publications

Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

High‐rate, low‐temperature deposition of multifunctional nano‐crystalline silicon nitride films

Comparison of Dual-Stack Dielectric Field Plates on β-Ga2O3 Schottky Rectifiers

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Comparison of Dual-Stack Dielectric Field Plates on β-Ga₂O₃ Schottky Rectifiers