Properties and device applications of hydrogenated amorphous silicon carbide films

Abstract

Articles you may be interested inPhotoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films

Current transport mechanisms in n-type amorphous silicon-carbon on p-type crystalline silicon (a-:H/c-Si) heterojunction diodes

“…From figure 2, an average diffusion potential (V D ) of about 0.8 V is obtained. This value agrees with V D = 0.8 V and V D = 0.9 V obtained by Rahman et al in n + a-Si 1−x C x :H/p c-Si [5] and Rahman and Furukawa in p + a-Si 1−x C x :H/n c-Si heterojunctions [4] respectively. In addition, from equation (1) and assuming N D > N A , the average carrier concentration in the p side of c-Si is found to be N A ≈ 1.1 × 10 16 cm −3 which agrees with the resistivity of c-Si, in the range 1-10 cm.…”

“…For example, Rahman and Furukawa [4] deposited a 60 nm p + -type a-Si 1−x C x :H layer by glow discharge on n-type crystalline silicon and found that the current was dominated by recombination and tunnelling at low temperatures (T < 340 K) and thermal injection at high temperatures (T > 340 K). In another study Rahman et al [5] presented the I -V characteristic of n + -type a-Si 1−x C x :H/p-type c-Si (111) heterostructure diodes at room temperature. a-Si 1−x C x :H films were deposited by plasma-enhanced chemical vapour deposition (PECVD) at 300 • C on 17 cm p-type c-Si.…”

Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure

“…5 shows the variation of C −2 with V for the solar cells with and without a p-nc-Si:H buffer layer deduced from the C-V measurements at 1 MHz. The frequency of 1 MHz is the same as that adopted by several workers to investigate the hydrogenated amorphous silicon materials using the C-V characteristics [19][20][21]. In Fig.…”

Improved open-circuit voltage of silicon nanowires solar cells by surface passivation

“…The measurement of the capacitance was carried out by means of a computer-controlled HP4192A impedance analyzer at a xed frequency of 1 MHz (ref. [24][25][26] and ac voltage of 10 mV, the ramp rate for the sweeping voltage is about 0.05 V s À1 . The SiNWs solar cells were placed in a closed chamber with electromagnetic shielding to avoid environmental inuence.…”