Properties and reliability of ultrathin oxides grown on four inch diameter silicon wafers by microwave plasma afterglow oxidation

Abstract

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Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide

“…In contrary, HCs from HV sample showed different response. 18,19 as well as rapid thermal oxidation in ozone studies 20 previously. This unexpected trend likely originates from degradation of the insulator resistance that is related to thin film quality and the remnant hysteresis governed by the control over cooling, whereas the high temperature resistance is relatively unaffected.…”

“…In the first 60 min of UV exposure, the transition became wider but shrank at longer times. 19,20 As the oxide thickness increases, the oxidation kinetics becomes slower. The UV-assisted changes in electrical properties were analyzed in greater detail in terms of the relative R 25 and R 100 denoted as R r25 and R r100 , respectively.…”