Properties of a-Si1−x Cx:H thin films deposited from the organosilane Triethylsilane

Niemann, J.; Bauhofer, W.

doi:10.1016/s0040-6090(99)00320-x

Cited by 20 publications

(34 citation statements)

References 26 publications

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“…Such luminescent properties are generally the attributes of a worsened quality of a material, i. e. enhanced concentration of crystalline imperfections and non-radiative centers. A similar decrease of the PL intensity with a substrate temperature was observed by other authors [14,15]. They conclude the strong PL intensity decrease for substrate temperatures above 300 K was caused by creation of unoccupied dangling bonds which act as the non-radiative centers.…”

Section: Resultssupporting

confidence: 85%

Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology

Valovič

Huran²,

Kučera³

et al. 2011

Eur. Phys. J. Appl. Phys.

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Section: Resultssupporting

confidence: 85%

Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology

Valovič

Huran²,

Kučera³

et al. 2011

Eur. Phys. J. Appl. Phys.

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“…Much higher Si/C values shown by the RHP-CVD TrES plot compared with those of the PCVD plot (Fig. 3) may be ascribed to the higher crosslink density Full Paper [23] ); and from TrMS by RHP-CVD (D; XPS data [21] ), as a function of substrate temperature. Figure 3 is that the Si/C values for the RHP-CVD films produced from TrES and TrMS remain in the following relations, which depend on the T s regime, i.e.…”

Section: Film Compositionmentioning

confidence: 95%

“…It was interesting to include in this Figure a plot, based on the literature data, [23] which refers to PCVD involving the same precursor as in the present study.…”

Section: Effect Of Thermal Activationmentioning

confidence: 99%

“…Figure 3 shows the Si/C ratio plotted as a function of substrate temperature. This Figure also presents, for comparison, the substrate temperature dependencies of the Si/C ratio determined for a-SiC:H films formed by: RHP-CVD from TrMS (XPS data [21] ) and PCVD from TrES electron probe microanalysis (EPMA data [23] ). The intrinsic values of the parameter Si/C calculated for the TrES and TrMS molecules are 0.17 and 0.33, respectively.…”

Section: Film Compositionmentioning

confidence: 99%

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Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

Wróbel

Walkiewicz-Pietrzykowska

Ahola

et al. 2009

Chemical Vapor Deposition

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Amorphous hydrogenated silicon carbide (a-SiC:H) films are produced by remote microwave hydrogen plasma (RHP)CVD using triethylsilane (TrES) as the single-source precursor. The reactivity of particular bonds of the precursor in the activation step is examined using tetraethylsilane as a model compound for the RHP-CVD experiments. The susceptibility of a TrES precursor towards film formation is characterized by determining the yield of RHP-CVD and comparing it with that of the trimethylsilane precursor. The effect of substrate temperature (T s ) on the rate of the RHP-CVD process, chemical composition, and chemical structure of the resulting a-SiC:H films is reported. The substrate temperature dependence of the film growth rate implies that film growth is independent of the temperature and RHP-CVD is a mass transport-limited process. The examination of the a-SiC:H films, performed by means of X-ray photoelectron spectroscopy (XPS), elastic recoil detection analysis (ERDA), and Fourier transform infrared absorption spectroscopy (FTIR), reveals that the increase in the substrate temperature from 30 -C to 400 -C causes the elimination of organic moieties from the film and the formation of a Si-carbidic network structure. On the basis of the results of the structural study, the chemistry involved in film formation is proposed.

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“…It is often used to characterize the temperature and compositional disorder in amorphous Si based alloys, particularly SiC:H [9,11,18,19]. B includes information on the disorder-induced correlation of optical transition between the valence and conduction bands [11].…”

Section: Resultsmentioning

confidence: 99%

Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects

2009

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Abstract:We report results obtained from measurements of optical transmittance spectra carried out on a series of silicon thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen. Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (µc-Si:H). Spectral refractive indices and absorption coefficients were determined from transmittance spectra. The spectral absorption coefficients were used to determine the Tauc optical band gap energy, the B factor of the Tauc plots, E 04 (energy at which the absorption coefficient is equal to 10 4 cm −1 ), and the Urbach energy as a function of the hydrogen dilution. The results were correlated with microstructure, namely volume fractions of the amorphous and crystalline phase with voids, and with the grain size.

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Properties of a-Si1−x Cx:H thin films deposited from the organosilane Triethylsilane

Cited by 20 publications

References 26 publications

Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology

Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology

Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects

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