Properties of Al<i>x</i>Ga1−<i>x</i>N films prepared by reactive molecular beam epitaxy

Yoshida, Sadafumi; Misawa, S.; Gonda, S.

doi:10.1063/1.329998

Cited by 277 publications

(114 citation statements)

References 24 publications

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“…It was found that the carrier concentration decreases monotonically with x in the ternary system AlxGal-xN [8]. This can be explained by a level emerging from the conduction band (CB) into the energy gap as the bandgap widens with the Al concentration.…”

Section: Introductionmentioning

confidence: 96%

Carrier Localization in Gallium Nitride

Wetzel¹,

Walukiewicz²,

Häller

et al. 1995

MSF

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Section: Introductionmentioning

confidence: 96%

Carrier Localization in Gallium Nitride

Wetzel¹,

Walukiewicz²,

Häller

et al. 1995

MSF

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“…Following a quite extensive analysis of Al x Ga 1-x N grown by molecular beam epitaxy by Yoshida et al [4] more than a decade ago, significant improvements concerning deposition techniques and the structural quality of epitaxial films have been made, so that a critical revision of the optical constants in the AlGaN alloy system is certainly justified. A precise knowledge of optical constants is particulary important in view of the use of AlGaN films in optical filters, light-emitting and laser diodes.…”

Section: Introductionmentioning

confidence: 99%

AlGaN-Based Bragg Reflectors

Ambacher

Arzberger

Brunner

et al. 1997

MRS Internet j. nitride semicond. res.

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We have studied the dependence of the absorption edge and the refractive index of wurtzite Al x Ga 1-x N films on composition using transmission, ellipsometry and photothermal deflection spectroscopy. The Al molar fraction of the Al x Ga 1-x N films grown by plasma-induced molecular beam epitaxy was varied through the entire range of composition (0 ≤ x ≤ 1). We determined the absorption edges of Al x Ga 1-x N films and a bowing parameter of 1.3 ± 0.2 eV. The refractive index below the bandgap was deduced from the interference fringes, the dielectric function between 2.5 and 25 eV from ellipsometry measurements. The measured absorption coefficients and refractive indices were used to calculate the design and reflectivity of AlGaN-based Bragg reflectors working in the blue and near-ultraviolet spectral region.

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“…However, there is no information at the moment about the intensities of these processes in the nitrides. In this work, we concentrate on the calculation of the radiative recombination rate in GaN, InN, AlN and their binary alloys Ga x Al 1-x N and In x Al 1-x N on the base of the experimental absorption data that is present in the literature [4] …”

Section: Introductionmentioning

confidence: 99%

The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys

Dmitriev

Oruzheinikov

1996

MRS Internet j. nitride semicond. res.

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The radiative recombination rates have been calculated for the first time in the wide band gap wurtzite semiconductors GaN, InN and AlN and their solid solutions Ga x Al 1-x N and In x Al 1-x N on the base of existing data on the energy band structure and optical absorption in these materials. We calculated the interband matrix elements for the direct optical transitions between the conductivity band and the valence one using the experimental photon energy dependence of the absorption coefficient near the band edge. In our calculations we assumed that the material parameters of the solid solutions (the interband matrix element, carrier effective masses and so on) could be obtained by a linear interpolation between their values in the alloy components. The temperature dependence of the energy gap was taken in the form proposed by Varshni. The calculations of the radiative recombination rates were performed in the wide range of temperature and alloy compositions.

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Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy

Cited by 277 publications

References 24 publications

Carrier Localization in Gallium Nitride

Carrier Localization in Gallium Nitride

AlGaN-Based Bragg Reflectors

The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys

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