Properties of AlN films deposited by reactive ion-plasma sputtering

Берт, Н. А.; Bondarev, A. D.; Zolotarev, V. V.; Kirilenko, D. A.; Lubyanskiy, Y.-A. V.; Lyutetskiy, A. V.; Slipchenko, S. O.; Petrunov, A. N.; Pikhtin, N. A.; Ayusheva, K. R.; Arsentyev, I. N.; Tarasov, I. S.

doi:10.1134/s1063782615100036

Cited by 11 publications

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Solving a number of technical problems and primarily raising the crystal length and providing a high-quality thermal management made it possible to reach record-breaking power levels, up to 30 W from an aperture of 100 µm [3,4]. Improving the quality of deposition of dielectric mirrors [5][6][7] and using special technologies [8] to protect mirrors from a high electrical and optical power density made it possible to far remove the threshold of their optical damage. Now, the main principles that restrict the power of lasers consist in those physical processes that start to dominate at high thermal, electrical, and optical stresses.…”

Section: Introductionmentioning

confidence: 99%

Internal optical loss and internal quantum efficiency of a high-power GaAs laser operating in the CW mode

Veselov

Bobretsova

Klimov

et al. 2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We continue the comparative studies of high-power AlGaAs/InGaAs/GaAs semiconductor lasers with different waveguide designs. In this work, measurements were carried out for a continuous-wave mode of operation: light-current and current-voltage characteristics, threshold characteristics and their temperature dependences and crystal temperature depending on the pump current. The data obtained made it possible to reconstruct the dependences of internal optical losses and internal quantum efficiency using calculations. It was shown that the main factor affecting the power characteristics in the continuous mode of operation is the temperature stability of the laser and its relationship with internal optical losses and internal quantum efficiency. Thus, lasers based on a heterostructure with a doped GaAs waveguide with characteristic temperatures T 0 and T 1 of 120 K and 170 K, respectively, demonstrated an increase in internal optical losses to 2 cm −1 and a drop in the quantum efficiency to 90%, which led to saturation of the output power by high pump currents. Lasers based on the heterostructure with an AlGaAs waveguide, which are characterized by higher temperature stability (T 0 = 161 K and T 1 = 280 K), had lower internal optical losses and a higher quantum efficiency. This made it possible to obtain optical power 1 W higher than that for lasers with GaAs waveguides.

show abstract