Properties of amorphous boron nitride thin films

Zedlitz, R.; Heintze, M.; Schubert, M.B.

doi:10.1016/0022-3093(95)00748-2

Cited by 59 publications

(47 citation statements)

References 4 publications

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“…However, the increased temperature during growth of layer 3 is enough to cause crystallization. Our results show that a very low substrate temperature (150 • C), is needed for growth of fully amorphous films at this composition. I concluded that it would not be possible to grow alternating amorphous and nanocrystalline layers using the Hf0.6Al0.2Si0.2-target, since a high flux is needed for the preferential resputtering of lighter elements.…”

Section: Paper Vmentioning

confidence: 71%

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Growth and Characterization of Amorphous Multicomponent Nitride Thin Films

Fager¹

2014

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This thesis explores deposition of amorphous thin films based on the two transition metal nitride systems, TiN and HfN. Additions of Si, Al and B have been investigated using three different deposition techniques: dc magnetron sputtering, cathodic arc evaporation, and high power impulse magnetron sputtering (HIPIMS). The effect of elemental composition, bonding structure, growth temperature, and low-energy ion bombardment during growth has been investigated and correlated to the resulting microstructure and mechanical properties of the films. The thermal stability has been investigated by annealing experiments. Deposition by cathodic arc evaporation yields dense and homogeneous coatings with essentially fully electron-diffraction amorphous structures with additions of either Al+Si, B+Si or B+Al+Si to TiN. The B-containing coatings have unusually few macroparticles. Annealing experiments show that Ti-Al-Si-N coatings have an age hardening behavior, which is not as clear for B-containing coatings. Compositional layering, due to rotation of the sample fixture during deposition, is present but not always visible in the as-deposited state. The layering acts as a template for renucleation during annealing. The coatings recrystallize by growth of TiN-rich domains. Amorphous growth by conventional dc magnetron sputtering is possible over a wide range of compositions for Ti-B-Si-N thin films. The Ti content in the films is reduced compared to the content in the sputtering target. Without Si, the films consist of a BN onion-like structure surrounding TiN nanograins. With additions of Si the films eventually grows fully amorphous. The growth temperature has only minor effect on the microstructure, due to the limited surface diffusion at the investigated temperature range (100-600 °C). Ion assisted growth leads to nanoscale densification of the films and improved mechanical properties. Ti-B-Si-N thin films are also deposited by a hybrid technique where dc magnetron sputtering is combined with HIPIMS. Here, the Ti:B ratio remains equal to the target composition. Films with low Si content are porous with TiN nanograins separated by BN-rich amorphous channels and have low hardness. Increasing Si contents yield fully electron-amorphous films with higher hardness. Finally, Hf-Al-Si-N single-layer and multilayer films are grown by dc magnetron sputtering from a single Hf-Al-Si target. Amorphous growth is achieved when the growth temperature was kept at its minimum. Low-energy substrate bias modulation is used to grow nanocomposite/nanocolumnar multilayers from the single Hf-Al-Si target, where the layers has essentially the same composition but different Si bonding structure, and different degree of crystallinity

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Section: Paper Vmentioning

confidence: 71%

“…BN can also form in less-defined structures including amorphous, 150,151,152 fullerene-like, 153,154,155 and a turbostratic polymorph 156,157 that was observed in Paper II.…”

Section: B O R O N N I T R I D Ementioning

confidence: 71%

Growth and Characterization of Amorphous Multicomponent Nitride Thin Films

Fager¹

2014

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“…The wurtzite form of BN is a hexagonal polymorph of carbon. In both cubic and wurtzite BN, boron and nitrogen atoms are classified as tetrahedral, but the angles between neighboring tetrahedral are different [1][2][3][4]. The both hexagonal and cubic BN are wide-gap semiconductors with a band gap energy corresponding to the UV region.…”

Section: Introductionmentioning

confidence: 99%

Quantum investigation of non-bonded interaction between the B15N15 ring and BH2NBH2 (radical, cation, anion) systems: a nano molecularmotor

Monajjemi

2011

Struct Chem

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The electromagnetic non-bonded interactions of BH 2 NBH 2 molecule inside the B 15 N 15 ring has been investigated with B3LYP method using EPR-II and EPR-III basis sets. Optimized structures, relative stability, and hyperfine spectroscopic parameters, such as total atomic charges, spin densities, electrical potential, and isotropic Fermi coupling constants of radical, cationic, and anionic forms of BH 2 NBH 2 in different loops and bonds have been calculated. The spectral properties have been contributed to explain the characteristics of hyperfine electronic structure. The calculation for the B 15 N 15 -BH 2 NBH 2 system and then for adenine-thymine base pairs coupled with BH 2 NBH 2 molecule inside the B 15 N 15 ring (A-BNB-T) have been done and three quantized rotational frequencies for transitions among cationic, radical, and anionic have been calculated, too. All observed frequencies appeared in the IR rotational region. So, this system can be used for the measurement of rotational spectra related to electrical voltage differences existing in macromolecules such as proteins and DNA and membrane. Extensive calculations have been carried out on the radical, anionic, and cationic forms of BH 2 NBH 2 to obtain data and it has been observed that the radial coordinate of the dipole moment vector (r) as well as the voltage differences (DV) and relative energies (DE) exhibited Gaussian distribution. We have obtained a relationship between dipole moments and the voltage differences and energies of system.

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“…It has hexagonal or cubic structure. The hexagonal form (h-BN) is among the most stable and softest BN polymorphs and is used as a lubricant or an additive to cosmetic products [3][4][5][6][7] . BNNTs are very similar to carbon nanotubes (CNTs) and, therefore, can form graphite like hexagonal layers.…”

Section: Introductionmentioning

confidence: 99%

NMR Studies of BH3-attaching in the Zigzag and Armchair BN Nanotubes: A DFT Study

Soleymani¹,

Ali²,

Niakan³

2012

Orientjchem.

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This article investigates the structure of armchair (3, 3) and zigzag (6, 0) boron nitrogen nanotubes (BNNTs) affected by addition of a Borane group (BH 3 ) by performing density functional theory (DFT) calculation at B3LYP levels of theory and 6-31G(d) basis set. The changes of the nuclear magnetic resonance (NMR) parameter of these structures were calculated by GIAO method implemented in the Gaussian 09W program of package. The results indicated that the addition of BH 3 to nanotubes affected the values of isotropic chemical shift (CS I ) and anisotropic chemical shift (CS A ) parameters. The addition of BH 3 also affected the values of bond length and bond angle. The results revealed that the attachment of BH 3 group to the surface of nanotubes had the potential to increase the chemical shift of the nuclei directly linked to Borane molecules.

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Properties of amorphous boron nitride thin films

Cited by 59 publications

References 4 publications

Growth and Characterization of Amorphous Multicomponent Nitride Thin Films

Growth and Characterization of Amorphous Multicomponent Nitride Thin Films

Quantum investigation of non-bonded interaction between the B15N15 ring and BH2NBH2 (radical, cation, anion) systems: a nano molecularmotor

NMR Studies of BH3-attaching in the Zigzag and Armchair BN Nanotubes: A DFT Study

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