Properties of carbon as an acceptor in cubic GaN

Köhler, Ulrich; Lübbers, M.; Mimkes, Jürgen; As, D. J.

doi:10.1016/s0921-4526(01)00713-x

Cited by 18 publications

(14 citation statements)

References 17 publications

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“…Moreover significant numbers of holes are in fact captured by the C N acceptors given that shallow DAP peaks (B3.27 eV) are observed in all of the GaN:C layers. The shallow DAP transition is known to involve acceptors of ionization energy 200-250 meV [16], consistent with values previously reported for C N [2,4,17].…”

Section: Variation Of Gan Optical Properties With Carbon Doping Levelsupporting

confidence: 87%

“…ohler et al [2] are also consistent with some degree of carbon diffusion and interaction in heavily doped MBE layers. This may have important consequences for the use of carbon as a dopant in GaN FET structures [23].…”

Section: Mechanism Of Carbon Incorporation In Ganmentioning

confidence: 62%

“…Intentional carbon doping of GaN is of interest for direct applications in fabrication of semiinsulating [1] and p-type [2] epilayers, as well as basic research on the influence of carbon defects on material properties. The latter is of particular importance given the omnipresence of carbon as a contaminant in GaN grown by metalorganic vapor phase epitaxy (MOVPE).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN

Armitage

Yang

Feick

et al. 2004

Journal of Crystal Growth

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Section: Variation Of Gan Optical Properties With Carbon Doping Levelsupporting

confidence: 87%

Section: Mechanism Of Carbon Incorporation In Ganmentioning

confidence: 62%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN

Armitage

Yang

Feick

et al. 2004

Journal of Crystal Growth

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“…This kind of spectra were observed in GaN:C samples with high C-flux and is shown in Fig. 3 [9,10]. However, whereas under stoichiometric growth conditions the near band edge luminescence was totally suppressed this band reappeared under Ga-rich growth conditions [11].…”

Section: Photoluminescence Measurementsmentioning

confidence: 76%

Carbon doping of cubic GaN under gallium‐rich growth conditions

Pacheco‐Salazar

Potthast

et al. 2003

phys. stat. sol. (c)

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“…The results of [6,7] show that at the intentional introduction of carbon into GaN lattice it occupies nitrogen sites and forms an acceptor-type electron trapping centers. However, due to its amphoteric nature the carbon impurity at higher doping levels is believed to occupy not only nitrogen sites but also gallium sites [5,[8][9][10]. Thus, selfcompensation becomes quite plausible.…”

Section: Resultsmentioning

confidence: 99%

A new approach to grow C‐doped GaN thick epitaxial layers

Gogova

Rudko

Siche

et al. 2011

Phys. Status Solidi C

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In this study we employ a new method for growth of carbon‐doped wurtzite crystalline GaN (GaN:C) based on vapour phase transport of Ga by the pseudohalide hydrogen cyanide HCN. GaN:C layers with a thicknesses from 10 to 100 μm and up to 19 mm in size were grown from gallium melt and ammonia as feeding materials in a carbon‐containing equipment. The properties of the GaN:C layers were characterized by low‐temperature photoluminescence (LTPL), High‐Resolution X‐ray Diffraction (HRXRD), Secondary Ion Mass Spectrometry (SIMS) and room‐temperature Hall effect and Raman spectroscopy measurements. HRXRD studies demonstrated good crystalline quality of the thick GaN layers (the Rocking curve FWHMs are 570 arcsec for the (0004) reflection and 561 arcsec for the (10‐14) reflection for 10 μm thick samples). The LTPL and Raman spectroscopy confirmed the good optical and structural quality of the material. The carbon concentration measured by SIMS was 6x1018 cm‐3, however, the room‐temperature Hall effect experiments showed n‐type conductivity. Carbon acceptor incorporation into GaN (from the transport agent) as well as the reason of its electrical overcompensation by unintentional impurities like oxygen and silicon is discussed. Ways of technological process improvement are proposed. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Properties of carbon as an acceptor in cubic GaN

Cited by 18 publications

References 17 publications

Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN

Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN

Carbon doping of cubic GaN under gallium‐rich growth conditions

A new approach to grow C‐doped GaN thick epitaxial layers

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