Properties of carbon-doped GaN

Tang, H.; Webb, J. B.; Bardwell, J. A.; Raymond, S.; Salzman, J.; Uzan‐Saguy, C.

doi:10.1063/1.1345816

Cited by 151 publications

(101 citation statements)

References 10 publications

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“…The measured hole concentration at room temperature depends non-linearly with the Mn incorporation and varies from 3x10 16 to 5x10 at room temperature. The apparent ionisation energy, E A , estimated from figure 3, assuming uncompensated material, is ~54meV for Mn in cubic Ga 1-x …”

Section: School Of Physics and Astronomy University Of Nottingham Nmentioning

confidence: 99%

P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

Novikov¹,

Edmonds

Giddings

et al. 2003

Semicond. Sci. Technol.

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Cubic (zinc-blende) Ga 1-x Mn x N layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger Electron Spectroscopy and Secondary Ion Mass Spectroscopy studies clearly confirmed the incorporation of Mn into cubic GaN, the Mn being uniformly distributed through the layer. X-ray diffraction studies demonstrated that the Mn-doped GaN films are cubic and do not show phase separation up to a Mn concentrations of x<0.1. P-type conductivity for the cubic Ga 1-x Mn x N layers was observed for a wide range of the Mn doping levels. The measured hole concentration at room temperature depends non-linearly on the Mn incorporation and varies from 3x10

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Section: School Of Physics and Astronomy University Of Nottingham Nmentioning

confidence: 99%

P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

Novikov¹,

Edmonds

Giddings

et al. 2003

Semicond. Sci. Technol.

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“…27 Finally, the use of methane with a plasma cracking source has demonstrated semi-insulating ͑SI͒ films with controlled carbon incorporation, but the x-ray rocking curve linewidths almost doubled in the carbon doped material, suggesting a deterioration in material quality may also be responsible for the semi-insulating nature of the films. 28 CBr 4 is well established for use as a shallow acceptor in other III-V materials. While there has been a single report on the intentional doping of GaN by CBr 4 , 29 there has been no comprehensive study detailing its behavior as a dopant in GaN.…”

Section: Introductionmentioning

confidence: 99%

Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

Green

Mishra

Speck

2004

Journal of Applied Physics

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Carbon tetrabromide (CBr 4 ) was studied as an intentional dopant during rf plasma molecular beam epitaxy of GaN. Secondary ion mass spectroscopy was used to quantify incorporation behavior. Carbon was found to readily incorporate under Ga-rich and N-rich growth conditions with no detectable bromine incorporation. The carbon incorporation ͓C͔ was found to be linearly related to the incident CBr 4 flux. Reflection high-energy electron diffraction, atomic force microscopy and x-ray diffraction were used to characterize the structural quality of the film's postgrowth. No deterioration of structural quality was observed for ͓C͔ from mid 10 17 to ϳ10 19 cm Ϫ3 . The growth rate was also unaffected by carbon doping with CBr 4 . The electrical and optical behavior of carbon doping was studied by co-doping carbon with silicon. Carbon was found to compensate the silicon although an exact compensation factor was difficult to extract from the data. Photoluminescence was performed to examine the optical performance of the films. Carbon doping was seen to monotonically decrease the band edge emission. Properties of carbon-doped GaN are interpreted to be consistent with recent theoretical work describing incorporation of carbon as function of Fermi level conditions during growth.

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“…1 Recently several groups have reported a "blue" luminescence band associated with carbon incorporation, [2][3][4][5] and progress has been made toward understanding the recombination mechanism. 6 However, while the C Ga -C N donoracceptor pair recombination hypothesis presented in ref.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the carbon-related “blue” luminescence in GaN

Armitage

Yang

Weber

2005

Journal of Applied Physics

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The properties of a broad 2.86 eV photoluminescence band in carbon-doped GaN were studied as a function of C-doping level, temperature, and excitation density. The results are consistent with a C Ga -C N deep donor-deep acceptor recombination mechanism as proposed by Seager et al. For GaN:C grown by molecular-beam epitaxy (MBE) the 2.86 eV band is observed in Si co-doped layers exhibiting high n-type conductivity as well as in semi-insulating material. For low excitation density (4 W/cm 2 ) the 2.86 eV band intensity decreases as a function of cw-laser exposure time over a period of many minutes. The transient behavior is consistent with a model based on carrier diffusion and charge trapping-induced Coulomb barriers. The temperature dependence of the blue luminescence below 150 K was different for carbon-contaminated GaN grown by metalorganic vapor phase epitaxy (MOVPE) compared to C-doped MBE GaN.

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Properties of carbon-doped GaN

Cited by 151 publications

References 10 publications

P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

Analysis of the carbon-related “blue” luminescence in GaN

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