Properties of Cd0.90-xMnxZn0.10Te (x = 0.10, 0.20) crystals grown by Vertical Bridgman method

Abstract

The correlation between Cd0.90-xMnxZn0.10Te (CMZT) melt state and structural properties of the crystals, grown by vertical Bridgman method, was investigated. The Cd0.9-xMnxZn0.1Te crystals with various Mn compositions (x = 0.1 and 0.2) were grown by a two-step method from high-purity elemental components. We have conducted a series of crystal growth runs with different degrees of melt superheating over the alloy's melting temperature. We obtained ingots with various crystalline structures and properties. It was concluded that the best crystals were grown from the melt with a thermal gradient of about 5 °C/cm during growth process. We have found that the band-gap increases (from 1.67 eV at x=0.1 to 1.79 eV at x=0.2) with Mn content.

Thermodynamics and crystal growth of Cd1-x-yMnxZnyTe (x=0.10, 0.20, y=0.15)

“…These values indicated that with MnTe concentration increasing from 10% to 20 % increased the band-gap value by 0.011 eV per 1% of MnTe. The increase of ZnTe concentration from 10% to 15 % changed the band-gap value of CMZT crystals from 1.67 eV [15] to 1.73 eV for Cd0.90-yMn0.10ZnyTe and from 1.78 eV [15] to 1.84 eV for Cd0.80-yMn0.20ZnyTe (0.012 eV per 1% ZnTe). Thus, even a slight increasing of MnTe and ZnTe concentration led to increasing of the band-gap value.…”

Extraordinary Carrier Diffusion on CdTe Surfaces Uncovered by 4D Electron Microscopy

“…Before use, the CdTe single crystals were prepared with different crystal orientations following the ''Bridgman'' synthesis method, described elsewhere. [55][56][57][58][59] The measured crystals have no ligands on top, and no treatment has been done except removing these oxide layers by cutting the crystals or using the Ar ion sputtering process.…”