Properties of copper-doped ZnTe thin films by immersion in Cu solution

Aqili, Akram K.S.; Maqsood, Asghari; Ali, Zulfiqar

doi:10.1016/s0169-4332(01)00315-4

Cited by 27 publications

(19 citation statements)

References 9 publications

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“…The undoped nanoribbons have two orders of magnitude higher resistivity than reported values for comparable nanostructures [18], but the properties of our Cu-doped nanoribbons agree well with those of doped nanowires [6]. The trend of decreasing resistivity with immersion time is in line with values obtained from similarly treated thin fi lms [19,20].…”

Section: Znte Nanoribbonssupporting

confidence: 87%

“…The substrates were immersed in an aqueous Cu(NO 3 ) 2 solution [6,19,20]. They were subsequently rinsed in deionized (DI) water and dried with compressed air.…”

Section: Dopingmentioning

confidence: 99%

“…As expected, both doped and undoped nanoribbons exhibit p-type behavior, with slightly enhanced conduction on applied negative gate voltage (not shown). It has been proposed that the copper ions are incorporated through an ion exchange process with Zn at the surface, leading to the development of a Cu surface layer which eventually blocks the incorporation of additional Cu [19]. Based on optical transmission studies, vacuum annealing at 400 ºC is suffi cient to diffuse Cu throughout a 500 nm fi lm [19].…”

Section: Znte Nanoribbonsmentioning

confidence: 99%

“…It has been proposed that the copper ions are incorporated through an ion exchange process with Zn at the surface, leading to the development of a Cu surface layer which eventually blocks the incorporation of additional Cu [19]. Based on optical transmission studies, vacuum annealing at 400 ºC is suffi cient to diffuse Cu throughout a 500 nm fi lm [19]. In addition to occupying Zn sites, Cu dopants are reported to accumulate at grain boundaries and Te-inclusions [24].…”

Section: Znte Nanoribbonsmentioning

confidence: 99%

See 3 more Smart Citations

Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios

et al. 2009

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We report synthesis windows for growth of millimeter-long ZnTe nanoribbons and ZnSe nanowires using vapor transport. By tuning the local conditions at the growth substrate, high aspect ratio nanostructures can be synthesized. A Cu-ion immersion doping method was applied, producing strongly p-type conduction in ZnTe and ionic conduction in ZnSe. These extreme aspect ratio wide-bandgap semiconductors have great potential for high density nanostructured optoelectronic circuits.

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Section: Znte Nanoribbonssupporting

confidence: 87%

“…The substrates were immersed in an aqueous Cu(NO 3 ) 2 solution [6,19,20]. They were subsequently rinsed in deionized (DI) water and dried with compressed air.…”

Section: Dopingmentioning

confidence: 99%

Section: Znte Nanoribbonsmentioning

confidence: 99%

Section: Znte Nanoribbonsmentioning

confidence: 99%

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Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios

et al. 2009

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“…Actually, Zn 2+ (74 pm) has a close ionic radius with Cu 2+ (73 pm), hence Cu can easily penetrate into ZnSe to replace Zn positions in the crystal lattice without making any change in the basic crystal structure and forming a mono phase. [20][21][22] A small hump is evident in the (111) peak for the 0% Cu sample which is probably due to the experimental noise and gives no information regarding the structural properties. As the concentration of Cu increased, the sharpness and peak intensity of (111) plane also increased.…”

Section: X-ray Diffraction Analysismentioning

confidence: 99%

Tune-Ability of Physical Properties of Nanocrystalline Cu x Zn1−x Se Thin Films with Copper Concentration

Arslan

Zakria

Naz

et al. 2015

Journal of Elec Materi

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Thin films of Cu x Zn 1Àx Se (0 £ x £ 0.20) have been prepared on glass substrates at room temperature by closed space sublimation. The effect of copper (Cu) concentration on the structural, optical and electrical properties of the prepared films has been investigated using x-ray diffraction (XRD), Raman spectroscopy (RS), spectrophotometery and Hall effect measurements. XRD spectra show that all the films are cubic with (111) preferred orientation. The lattice constants, crystallite size, strain, and dislocation density were calculated from the XRD spectra. The structural analysis shows that crystallite size and crystallinity increase while strain and dislocation density decrease up to 10% Cu addition. However, an opposite trend has been observed beyond 10% Cu concentration. RS was carried out to investigate different phonon bands and crystalline phases. The strong reflection corresponding to the (111) texture in the XRD and the observed longitudinal optical (LO) phonon bands at 251 cm À1 and 497 cm À1 in the Raman spectra reveal the formation of single phase zinc-blende structure. The band gap energy decreases from 2.67 eV to 2.24 eV as the Cu concentration is increased from 0% to 20%. Hall effect measurements shows that electrical resistivity (q) is decreased by about three orders of magnitude from 10.4 9 10 À03 X-cm to 47.9 9 10 À03 X-cm while, carrier concentration and mobility (l) is increased with Cu addition.

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An evolution to Cu concentration on ZnTe thin films: functionality as interface layer to CdTe solar cells

et al. 2023

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Properties of copper-doped ZnTe thin films by immersion in Cu solution

Cited by 27 publications

References 9 publications

Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios

Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios

Tune-Ability of Physical Properties of Nanocrystalline Cu x Zn1−x Se Thin Films with Copper Concentration

An evolution to Cu concentration on ZnTe thin films: functionality as interface layer to CdTe solar cells

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