Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios

Yim, Joanne W. L.; Chen, Deirdre; Brown, Gregory; Wu, Junqiao

doi:10.1007/s12274-009-9095-7

Cited by 16 publications

(13 citation statements)

References 34 publications

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“…Simultaneously, the photocurrent spikes generated by the system and the time dependency of the response signal satisfy the Hebbian STDP rule . Additionally, as promising candidates, nitrides (e.g., AlN), tellurides (e.g., ZnTe) and other compounds (e.g., AgI, manganite) have also been explored for memristor applications.…”

Section: Active Materials and Dopantsmentioning

confidence: 98%

Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

Wang

Nagai

et al. 2017

Adv Elect Materials

187

124

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Memristors have been intensively studied in recent years as potential building blocks for the construction of versatile neuromorphic architectures. The prevalent developments focus on nanoionic devices due to their ease of reversible regulation, non-volatility, scalability down to the atomic level, low-energy consumption, nanosecond response times, sufficient yield and reliability, as well as their homologous regulatory mechanisms with biological synapses. However, despite their desirable structures and excellent properties, the previously reported properties of nanoionic devices are rather diverse and dissatisfactory for the delivery of reliable analog properties, which is the precondition for the imitation of brain-like functions. Here, the general requirements of neuromorphic engineering in terms of device structure, characterization parameters, synaptic functions and device engineering are introduced. A critical overview of the proposed nanoionic mechanisms for memristive switching is given, focusing particularly on providing fundamental insights into the strategies for regulating the adaptive memristive characteristics of devices that resemble the behaviors of biological synapses, which is an element of neural networks. In addition, the research progress in active materials (e.g., oxides, polymers, small molecules, bio-macromolecules and dopants), especially regarding the correlation among materials, is elaborated and a rational approach to provide insight into new design strategies is considered, and how to understand the memristor mechanisms and further achieve excellent memristive devices is discussed. Finally, the current challenges and several possible future research directions in this area are discussed.

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Section: Active Materials and Dopantsmentioning

confidence: 98%

Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

Wang

Nagai

et al. 2017

Adv Elect Materials

187

124

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“…Este material puede cristalizar en dos tipos de estructuras cristalinas: Zincblenda (cúbica) y Wurtzita (hexagonal), cuyos sistemas cristalinos asociados a estas estructuras son Fm< 43 > y Pmc< 186 >, respectivamente. La fabricación de ZnSe en forma de película delgadas se ha realizado a partir de diferentes técnicas: haces moleculares (Molecular Beam Epitaxy, MBE) [8], deposito químico en fase vapor con precursores orgánico-metálicos (Metal Organic Chemical Vapor Deposition, MOCVD) [9], spray pirolisis [10], evaporación asistida por láser pulsado [11], métodos químicos [12] y pulverización catódica [13]. Este trabajo presenta el estudio de las propiedades opto-eléctricas (respuesta espectral y temporal) y morfológicas de las películas delgadas de ZnSe en función de la temperatura de sustrato, las cuales fueron depositadas sobre sustratos de vidrio por evaporación térmica de alto vacío.…”

Section: Introductionunclassified

Estudio de la respuesta espectral en el visible de películas delgadas de ZnSe

et al. 2014

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En este trabajo es presentado el estudio de la fotoconductividad en películas delgadas de ZnSe depositadas sobre sustratos de vidrio a diferentes temperaturas, en condiciones de alto vacío usando la técnica de evaporación térmica. El efecto de la temperatura de sustrato sobre la fotoconductividad espectral y las propiedades morfológicas de las películas delgadas de ZnSe fueron estudiados. Para las medidas de fotoconductividad se depositaron contactos de cobre sobre las muestras. Se midieron las respuestas espectrales para las muestras para el rango comprendido entre 290 y 500 nm. En todas las muestras la señal presento dos contribuciones asociadas a las transiciones E(Γ7V – Γ6C) y Eg(Γ8V – Γ6C) con valores promedio de energía de 3.35 y 2.80 eV, respectivamente. El tiempo de respuesta de las muestras está asociado a la morfología de la muestras. En las muestras preparadas a bajas temperaturas se obtuvieron tiempos de respuesta del orden de los segundos, mientras que, el tiempo disminuye en un orden de magnitud en las muestras preparadas a temperatura de sustrato de 250 °C.

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“…26 Yim et al also reported the ex-situ Cu doping of ZnTe nanoribbons by a similar Cu-ion immersion doping method. 27 Recently, Li et al reported in-situ N doping of ZnTe nanoribbons with improved p-type conductivity by using a gaseous NH 3 dopant source. 28 However, to the best of our knowledge, there is no report on phosphorus doping in ZnTe nanowires.…”

Section: Introductionmentioning

confidence: 99%

In-Situ Phosphrous Doping in ZnTe Nanowires with Enhanced p-type Conductivity

Cao¹,

Liu²,

Chen³

et al. 2012

j nanosci nanotechnol

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Single-crystalline undoped and phosphrous-doped (P-doped) p-type ZnTe nanowires (NWs) were synthesized via a simple vapor transport and deposition method. Both undoped and P-doped ZnTe nanowires have zinc blende structure and uniform geometry. X-ray diffraction peaks of the P-doped ZnTe nanowires show an obvious shift toward higher diffraction angle as compared with the undoped ZnTe nanowires. X-ray photoelectron spectroscopy confirms the existence of P-dopant in the ZnTe nanowires. Field-effect transistors based on both undoped and P-doped ZnTe nanowires were fabricated and characterized. Electrical measurements demonstrated that P-doping led to an enhancement in ptype conductivity of ZnTe nanowires. A defect reaction mechanism was proposed to explain the p-type behaviors of both undoped and P-doped ZnTe nanowires.

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Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios

Cited by 16 publications

References 34 publications

Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

Estudio de la respuesta espectral en el visible de películas delgadas de ZnSe

In-Situ Phosphrous Doping in ZnTe Nanowires with Enhanced p-type Conductivity

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