Properties of CuInxGa1−xSe2 thin films grown from electrodeposited precursors with different levels of selenium content

Kang, Fengwen; Ao, Jianping; Sun, Guangyi; He, Qiang; Sun, Yun

doi:10.1016/j.cap.2009.10.015

Cited by 27 publications

(11 citation statements)

References 14 publications

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“…Still the process will not be a viable one for large scale production of the film. Polycrystalline CIGS thin film absorbers were prepared by selenizing electrodeposited precursors (Kang et al, 2010). In this two different levels of selenium contents were prepared and the performance characteristics were compared.…”

Section: The Difficulty In Scaling Up Of the Existing Technologiesmentioning

confidence: 99%

Electrodeposition route to synthesize cigs films – an economical way to harness solar energy

Renganathan¹,

Subramanian²,

Mohan³

2011

Int. J. Eng. Sci. Tech

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Copper Indium Gallium Selenide has become one of the most highly promising absorber materials for thin film solar cells due to its exceptional semiconductor characteristics. Various attempts have been made in the recent years to scale up the production of these films. In this review the difficulty in scaling up of the existing technologies, the necessity of nano-particles of CIGS for solar cells, how the charge separation in this nano scale photovoltaic (PV) materials occurs which help in absorption of radiation, and the electro-deposition route, a low cost one, produces thin film solar cells are analyzed. The envisaged pulse electro-deposition route will not only produce the required nano-scale CIGS films but also a route to large scale economical production of thin films solar cells.

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Section: The Difficulty In Scaling Up Of the Existing Technologiesmentioning

confidence: 99%

Electrodeposition route to synthesize cigs films – an economical way to harness solar energy

Renganathan¹,

Subramanian²,

Mohan³

2011

Int. J. Eng. Sci. Tech

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“…In view of this, the present section will only update the recent work done in this area, so as not to duplicate the recently published work. In the recent development, Kang et al [150] have prepared CIGS absorber by selenizing electrodeposited precursor with rich Se and poor Se content. The Se-poor electrodeposited precursor had better crystallinity and increased Ga content.…”

Section: Nonvacuum-based Approach Vacuum-evaporated Polycrystallinementioning

confidence: 99%

Progress in Polycrystalline Thin-Film Cu(In,Ga)Se2Solar Cells

Singh

Patra

2010

International Journal of Photoenergy

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For some time, the chalcopyrite semiconductor CuInSe2and its alloy with Ga and/or S [Cu(InGa)Se2or Cu(InGa)(Se,S)2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide) substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

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“…However, the use of electrodeposition technique to fabricate CIS-based films generally results in rough surface and poor crystalline structure with small crystal size. The surface morphology of electrodeposited films usually shows cauliflower-like, triangular, or round structures, or irregular growth [19][20][21][22]. This feature is attributed to growth phases and stoichiometry, but is more difficult to control during the electrodeposition process compared with the vacuum-produced process.…”

Section: Introductionmentioning

confidence: 97%

Improving the characteristics of CdS and CIAS films and the performances of CIAS solar cells by electrodeposition Cu–Se/CIAS binary structure precursors on FTO substrate

Huang

Liu

Hung

et al. 2014

J Mater Sci: Mater Electron

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Cu-poor electrodepositedCuIn 1-x Al x Se 2 (CIAS) precursor films were prepared to investigate the alteration in surface morphology of post-annealed CIAS films through post-annealing temperature adjustment. Scanning electron microscopy (SEM) and atomic force microscope (AFM) analyses demonstrated that surface morphology and root-mean-square (RMS) roughness of post-annealed CIAS films exhibited uneven and rough triangular structures. The crystal size of post-annealed CIAS films can be increased by increasing post-annealing temperature. The precursor film structure was modified by substituting Cu-Se/CIAS binary structure with CIAS single structure to proceed with the investigation. The apparent variation in surface morphology of post-annealed CIAS films changed from rough triangular structures to smooth round structures, and the RMS roughness of post-annealed CIAS films was reduced to \100 nm. The reduction was attributed to the formation of Cu-Se liquid phases during the post-annealing process, which enhanced elemental migration, recombination, and promotion of large grains and smooth surface formation. X-ray diffraction patterns showed three preferred growth orientations along the (112), (204/220), and (116/312) planes with chalcopyrite structures for all species. In addition, the characteristics of surface morphology, RMS roughness, and current measurement of subsequently deposited cadmium sulfide (CdS) film were studied and examined via SEM and AFM analyses. The surface morphology of CdS films deposited on binary structure post-annealed CIAS films exhibited smoothness, compactness, small RMS roughness, and large crystals with round and film-like structure. The AFM current images indicated that the distribution of leakage current paths was greatly diminished by changing the precursor film structure from CIAS single structure to CuSe/CIAS binary structure. The dark current-voltage characteristics of the CdS/CIAS heterojunctions showed that the reverse dark current density was decreased by approximately one order of magnitude from 4.02 9 10 -4 (single structure) to 4.26 9 10 -5 A/cm 2 (binary structure). Furthermore, the conversion efficiency of CIAS solar cells was enhanced from 0.52 (single structure) to 1.44 % (binary structure) with increase in V oc and J sc .

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Properties of CuInxGa1−xSe2 thin films grown from electrodeposited precursors with different levels of selenium content

Cited by 27 publications

References 14 publications

Electrodeposition route to synthesize cigs films – an economical way to harness solar energy

Electrodeposition route to synthesize cigs films – an economical way to harness solar energy

Progress in Polycrystalline Thin-Film Cu(In,Ga)Se2Solar Cells

Improving the characteristics of CdS and CIAS films and the performances of CIAS solar cells by electrodeposition Cu–Se/CIAS binary structure precursors on FTO substrate

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