Properties of diamond like carbon films by plasma based ion implantation and deposition method applying radio frequency wave and negative high voltage pulses through single feedthrough

Tojo, H.; Mokuno, Yoshiaki; Chayahara, Akiyoshi; Iura, S.; Kasai, Hayao; Toyohara, N.; Hidaka, Tomomi; Isogawa, Sachihiro; Hijino, M.; Horino, Y.

doi:10.1016/s0168-583x(03)00870-x

Cited by 5 publications

(1 citation statement)

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“…[4][5][6][7][8][9][10][11][12][13][14][15][16][17] A large number of these investigations have focused on the effect of various deposition techniques and parameters of deposition on the structure and mechanical properties of the coatings. [6][7][8][9][10] The effect of film thickness has been studied by Beake and Lau. 11 Moreover, the effect of substrate type on the mechanical behavior of DLC coatings has been investigated by Steadler and Schiffman, 12 Poliakov et al, 13 and Zhang and Huang.…”

Section: Introductionmentioning

confidence: 99%

Berkovich indentation of diamondlike carbon coatings on silicon substrates

et al. 2008

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The deformation behavior of diamondlike carbon (DLC) coatings on silicon substrates induced by Berkovich indentation has been investigated. DLC coatings deposited by a plasma-assisted chemical vapor deposition technique were subjected to nanoindentation with a Berkovich indenter over a range of maximum loads from 100 to 300 mN. Distinct pop-ins were observed for loads greater than 150 mN. However, no pop-out was observed for the loads studied. The top surface of the indents showed annular cracks with associated fragmented material. The cross sections showed up to 20% localized reduction in thickness of the DLC coating beneath the indenter tip. Cracking, {111} slip, stacking faults, and localized phase transformations were observed in the silicon substrate. The discontinuities in the load–displacement curves at low loads are attributed to plastic deformation of the silicon substrate, whereas at higher loads they are attributed to plastic deformation as well as phase transformation.

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