Properties of epitaxial BaTiO3 deposited on GaAs

Contreras-Guerrero, R.; Veazey, Joshua P.; Levy, Jeremy; Droopad, R.

doi:10.1063/1.4773988

Cited by 41 publications

(29 citation statements)

References 28 publications

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“…However, the combined effect of the high temperature Ge oxide desorption at 800 C for 30 min and the 650 C growth temperature required for BTO during the MBE growth process led to crystallographic disorder at the BTO/(100)Ge interface. Contreras-Guerrero et al 22 demonstrated MBE grown epitaxial BTO on (100)GaAs with 8 Å STO buffer layer. In their study, it was hypothesized that the BTO layer is rotated by 45 with respect to GaAs layer suggesting that the BTO (110) planes are parallel to the GaAs (100) planes.…”

Section: Resultsmentioning

confidence: 99%

“…20,21 BTO has also been used as a buffer layer for integration of Ge on Si and continues to be of interest for added functionalities on Si or Ge for low-power CMOS logic applications. However, integration of BTO on semiconductors faces numerous challenges such as: (i) the epitaxial nucleation requires oxide formation on the surface, 22 (ii) requirement of oxide buffer layer (e.g., BaSrO, BaO, MgO, SrTiO 3 (STO)) between the BTO and the parent substrate to ensure that BTO is c-axis oriented, [22][23][24][25][26][27] (iii) monolayer (ML) of strontium (Sr) metal as the nucleation layer, 28 and (iv) large lattice mismatch (>20%) with Ge-on-Si(001). 29 Vaithyanathan et al 30 suggest that a thick buffer layer of BaSrO is needed for c-axis oriented BTO when grown on Si.…”

Section: Introductionmentioning

confidence: 99%

“…It is limited to <0.2% lattice mismatch if the BTO growth aligns with in-plane lattice constant of (100)Ge or (100)GaAs. In order to achieve the rotation of the BTO lattice, several approaches have been proposed, namely, deposition of ultra-thin barium (Ba) interlayer, 29 BaO interlayer, 23 STO nucleation layer, 22,33 and MgO buffer layer. 31,32 A robust quasi-zero lattice mismatched BTO growth on oriented Ge layer is highly preferred without any interlayer to achieve desired electrical characteristics and to make the process compatible with standard fabrication.…”

Section: Introductionmentioning

confidence: 99%

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Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge

Hudait

Zhu

Jain

et al. 2013

Journal of Applied Physics

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Growth, structural, and band alignment properties of pulsed laser deposited amorphous BaTiO3 on epitaxial molecular beam epitaxy grown (110)Ge layer, as well as their utilization in low power transistor are reported. High-resolution x-ray diffraction demonstrated quasi-zero lattice mismatch of BaTiO3 on (110)Ge. Cross-sectional transmission electron microscopy micrograph confirms the amorphous nature of BaTiO3 layer as well as shows a sharp heterointerface between BaTiO3 and Ge with no traceable interfacial layer. The valence band offset, ΔEv, of 1.99 ± 0.05 eV at the BaTiO3/(110)Ge heterointerface is measured using x-ray photoelectron spectroscopy. The conduction band offset, ΔEc, of 1.14 ± 0.1 eV is calculated using the bandgap energies of BaTiO3 of 3.8 eV and Ge of 0.67 eV. These band offset parameters for carrier confinement and the interface chemical properties of the BaTiO3/(110)Ge system are significant advancement towards designing Ge-based p-and n-channel metal-oxide semiconductor field-effect transistors for low-power application.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge

Hudait

Zhu

Jain

et al. 2013

Journal of Applied Physics

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“…By inserting an ultrathin STO layer between BTO and Ge, one can impose compressive in-plane strain on BTO that can overcome tensile stress caused by the thermal expansion mismatch and thereby achieve BTO on Ge with out-of-plane polarization 5 ; a similar approach was recently used to grow BTO on GaAs. Ferroelectric switching of c-axisoriented BTO on STO-buffered GaAs was demonstrated by Huang et al 23 using preferentially oriented films with columnar crystallites, and by Contreras-Guerrero et al 24 using flat epitaxial films.…”

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confidence: 99%

Carrier density modulation in a germanium heterostructure by ferroelectric switching

et al. 2015

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The development of non-volatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching and measurable semiconductor modulation. Here we report a true ferroelectric field effect-carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in epitaxial c-axis-oriented BaTiO 3 grown by molecular beam epitaxy. Using the density functional theory, we demonstrate that switching of BaTiO 3 polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms BaTiO 3 tetragonality and the absence of any low-permittivity interlayer at the interface with Ge. The non-volatile, switchable nature of the single-domain out-of-plane ferroelectric polarization of BaTiO 3 is confirmed using piezoelectric force microscopy. The effect of the polarization switching on the conductivity of the underlying Ge is measured using microwave impedance microscopy, clearly demonstrating a ferroelectric field effect.

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“…This peak is deconvoluted into 41.7 eV (elemental arsenic) and 40.9 eV (AseGa). Therefore, at the interface (ZnO/SIeGaAs), in addition to the elemental arsenic, arsenic bonded with gallium (AseGa) is also present [33,34]. However, no signature related to As O (40.0 eV) or any other acceptor state was found in the XPS spectra [14].…”

Section: Resultsmentioning

confidence: 99%