Properties of high k gate dielectric gadolinium oxide deposited on Si (1 0 0) by dual ion beam deposition (DIBD)

Abstract

Gadolinium oxide thin films have been prepared on silicon (1 0 0) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd 2 O 3 structure with preferred orientation ð % 4 0 2Þ at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (2 0 2), and finally, the cubic structure appeared at the substrate temperature of 700 C, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd 2 O 3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. r

Ultra small Gd2O3 nanoparticles: Absorption and emission properties

“…2b)corresponds to Gd (3d 5/2 ) in Gd 2 O 3 . These results are in good agreement with the previously published XPS studies on Gd 2 O 3 nanoparticles[28,30,31].…”

A simple way to synthesize well-dispersed Gd2O3 nanoparticles onto reduced graphene oxide sheets

“…The peak of Si-O is overlaid with HO-C5 5O around the binding energy of 531.6 eV. And the peak at the higher binding energy region (around 532.3 eV) indicate the existence of C5 5O and C-OH [19][20][21]. This provides the evidence for the presence of oxygencontaining groups and complexation of Gd.…”

Hemoglobin-mediated biomimetic synthesis of paramagnetic O2-evolving theranostic nanoprobes for MR imaging-guided enhanced photodynamic therapy of tumor

“…The peaks of binding energies located at 531.1 eV and 532.2 eV corresponded to the oxygen in Gd 2 O 3 and Gd(OH) 3 , respectively. The 532.9 eV peak was attributed to the oxygen in -OH and -COOH of Hb molecule (Figure 1 E) 22 , 33 - 35 . As shown in the UV-vis absorption spectrum in Figure 1 F, the absorption peaks centered at 504 nm and 656 nm in Gd@Hb Ce6-PEG were the characteristic Ce6 peaks, indicating the successful loading of Ce6.…”