Properties of hydrogenated amorphous silicon carbide films prepared by plasma-enhanced chemical vapor deposition

Kuhman, D.; Grammatica, S.; Jansen, Frank

doi:10.1016/0040-6090(89)90573-7

Cited by 42 publications

(11 citation statements)

References 13 publications

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“…Most theoretical models predict further increasing of the energy gap in the Si-C compounds if the composition deviates from stoichiometric SiC towards a higher content of carbon atoms (see [32]). This is however in contradiction with experimental results [33][34][35] where the energy gap value tends to show a maximum for compositions close to that of the stoichiometric SiC crystal. Our calculated results are presented in figure 2.…”

Section: Single Antisite Defectscontrasting

confidence: 99%

The effect of the atomic relaxation around defects on the electronic structure and optical properties of β-SiC

Cubiotti

Kucherenko

Yaresko

et al. 1999

J. Phys.: Condens. Matter

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The electronic structure and the optical properties associated with antisite defects in cubic SiC have been computed by means of the LMTO (linear muffin-tin orbital) method and the supercell approach. The orbital-dependent LDA + U potential (LDA ≡ local density approximation) used in the present work gives rise to an improved description both of the electronic structure near the energy gap and of the optical functions. Attention has been mainly focused on the effects caused by the local lattice relaxation around the defects. For compositions that deviate from the stoichiometric SiC towards higher content of carbon atoms, the small reduction of the energy gap which is observed experimentally can be explained only if the lattice relaxation is taken into account. The local electronic structure of antisite defects is characterized by s-and p-like resonance states in the valence band. Strong resonances occur also in the conduction band (especially for C Si ). The Si C (C Si ) antisite has more (fewer) valence electrons localized in the atomic sphere than the official Si (C) atom, but this difference is considerably reduced by the lattice relaxation. The results of the calculations show how the presence of point defects modifies the shape of the optical functions of the perfect SiC crystal and how the lattice relaxation has a strong effect on the fine structure of the optical functions. Different kinds of defect lead to different shapes of the optical functions.

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Section: Single Antisite Defectscontrasting

confidence: 99%

The effect of the atomic relaxation around defects on the electronic structure and optical properties of β-SiC

Cubiotti

Kucherenko

Yaresko

et al. 1999

J. Phys.: Condens. Matter

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“…E o decreases linearly from 3.3 to 2.6 eV with Si/C and/or T S rising. A compositional dependence of E o similar to that shown in Figure 14 was reported for DP‐CVD a‐Si:C:H films 64–66…”

Section: Resultssupporting

confidence: 75%

Remote hydrogen plasma chemical vapor deposition of silicon–carbon thin‐film materials from a hexamethyldisilane source: Characterization of the process and the deposits

Wróbel

Walkiewicz-Pietrzykowska

Klemberg-Sapieha

et al. 2002

J of Applied Polymer Sci

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Amorphous, hydrogenated silicon-carbon (a-Si:C:H) films were produced by remote hydrogen plasma chemical vapor deposition (RHP-CVD) with hexamethyldisilane (HMDS) as the starting compound. Microwave hydrogen plasma was the source of the atomic hydrogen active species. The susceptibility of particular bonds in the HMDS molecule toward the initiation step was established with tetramethylsilane as a model compound. The reaction mechanisms proposed for the RHP-CVD process revealed the important role of polymerization in film growth. The temperature dependence of the film growth rate implied that the investigated RHP-CVD was a nonthermally activated process. The a-Si:C:H films produced at different deposition temperatures were characterized in terms of their chemical structure, surface and bulk composition, surface morphology, surface free energy, density, corrosion resistance, mechanical properties (adhesion and hardness), and optical properties (refractive index and optical band gap). The deposition temperature appeared to be a key parameter, precisely controlling the structure and properties of the resulting films. Based on the results of these studies, reasonable structure-property relationships were found.

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“…Recently the low temperature epitaxial growth of 3C-SiC was also reported [1]. In the SiC growth by PECVD, various Si sources, such as SiH 4 [2], methylsilanes [3] and silicon halide [4], are used. SiH 4 and methylsilanes are also applied to HW-CVD [5][6].…”

Section: Introductionmentioning

confidence: 99%

Characterization of polycrystalline SiC films grown by HW-CVD using silicon tetrafluoride

et al. 2008

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SiC films were synthesized by hot-wire chemical vapor deposition using a tungsten filament and a gas mixture of SiF 4 and CH 4 . The etching of the substrate instead of the film growth occurred on the samples prepared using only source gases without H 2 dilution. The atomic or molecular hydrogen was believed to control the density of radicals containing F in a gas phase or on a growth surface. Polycrystalline 3C-SiC(111) films were successfully obtained at substrate temperatures lower than 500 o C by using H 2 dilution. The growth mode limited by source-gas supply was found to be important to obtain polycrystalline SiC films. The SiC film grown at higher deposition pressure was amorphous and contained no Si-H x bonds but 6% fluorine. In SiF 4 /CH 4 /H 2 system, the radicals containing F are considered to play very important roles in the reactions both on a growth surface and in a gas-phase.

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Properties of hydrogenated amorphous silicon carbide films prepared by plasma-enhanced chemical vapor deposition

Cited by 42 publications

References 13 publications

The effect of the atomic relaxation around defects on the electronic structure and optical properties of β-SiC

The effect of the atomic relaxation around defects on the electronic structure and optical properties of β-SiC

Remote hydrogen plasma chemical vapor deposition of silicon–carbon thin‐film materials from a hexamethyldisilane source: Characterization of the process and the deposits

Characterization of polycrystalline SiC films grown by HW-CVD using silicon tetrafluoride

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