Properties of in situ HCl‐doped emeraldine polyaniline on n ‐Si(100) substrates for diode application

Abstract

In this study, the characteristic physicochemical and electrical properties of HCl‐doped polyaniline (PAni) films grown via oxidative chemical polymerization of aniline on n ‐Si(100) are presented. Two exothermic processes were found for 0.2 M HCl solution during aniline polymerization while all others underwent one exothermic process only. All polyaniline films were of emeraldine salt form that exhibited connected rod‐like to agglomerated grains and dendritic surface morphologies on top of wetting layer with increasing hydrochloric acid concentration. Rectifying behaviour of p‐ PAni/n ‐Si(100) heterojunctions were also found indicating the formation of p‐n junction between p ‐PAni and n ‐Si(100). (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Optimized polyaniline‐transition metal oxide composites: A comparative study of alternating current conductivity via correlated barrier hopping model

“…2a. The appearance of broad band at 3,438 cm 21 attributed to the N-H stretching vibration, the band 1,495 cm 21 attributed to C 5 C stretching vibration of benzenoid ring and comparing with this, the relatively less intense absorption band at 1,570 cm 21 attributed to C 5 C stretching vibration of quinoid ring, all confirm the emeraldine salt form of PANI [49,50]. The bands at 3,227 cm 21 , 1,295 cm 21 , 1,141 cm 21 , 820 cm 21 , and 727 cm 21 are attributed, respectively, to the C-H stretching vibration, C-N stretching of imine and secondary amine, C-H in-plane bending vibration,1,4-coupling of aromatic ring and C-H out-plane bending vibration [51].…”