2009
DOI: 10.12693/aphyspola.115.704
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Properties of Indium Tin Oxide Thin Films Deposited on Polymer Substrates

Abstract: Indium tin oxide thin films with different thicknesses were deposited on polymer substrates, held at room temperature, using electron beam evaporation. The dependence of structural properties, optical properties and room temperature resistivity on the indium tin oxide film thickness was studied. X-ray diffraction illustrates the amorphous structure for all the indium tin oxide prepared films. The high roughness of the polymer substrate affects the properties of indium tin oxide films. The transmittance, the re… Show more

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Cited by 43 publications
(19 citation statements)
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“…When the structure of the films becomes crystalline, these electrons are released from the bound. Similar observations have been reported for CuAlS 2 , ITO and NiO thin films by [9], [10] and [11] respectively. More so, the high values of resistivity of as deposited films may be due to the presence of disorder, high density of state and structural defects in the film as observed in XRD which renders the films amorphous.…”
Section: Resultssupporting
confidence: 90%
“…When the structure of the films becomes crystalline, these electrons are released from the bound. Similar observations have been reported for CuAlS 2 , ITO and NiO thin films by [9], [10] and [11] respectively. More so, the high values of resistivity of as deposited films may be due to the presence of disorder, high density of state and structural defects in the film as observed in XRD which renders the films amorphous.…”
Section: Resultssupporting
confidence: 90%
“…The AFM analysis shows the highest value of rms surface roughness for the undoped ZnS film, which may lead to enhanced scattering loss, and that can be the reason for low transmittance observed in the undoped ZnS film. 40 When the silver incorporation increases beyond 1 wt. %, transmittance of the films decreases systematically.…”
Section: F Optical Analysismentioning
confidence: 99%
“…At% ratio of Sn:In was found to be *1.12 in all the cases. Indium tin oxide is essentially formed by substitutional doping of In 2 O 3 with Sn replacing the In(III) atoms from the cubic bixbyite structure of indium oxide [32]. However, in ITO both substitutional tin and oxygen vacancies contribute to the conductivity [33,34].…”
Section: Surface Morphology Analysis By Scanning Electron Microscopy mentioning
confidence: 99%