Properties of InGaAs/GaAs QW coupled edge and surface emitting tilted cavity lasers

Abstract

Abstract:We report on a new structure design and optical properties of the coupled edge and horizontal cavity vertical emitting laser (CE-HCSEL) with emission wavelength of ∼ 1160 nm based on InGaAs/GaAs double quantum well structure in the active layer. The CE-HCSEL incorporates two oxide stripe lasers coupled through the air slit terminated by 45• etched front facet that produce total internal reflection perpendicular to the surface. The front mirror facet were fabricated using chemically assisted ion beam etching while the cleaved rear facets were coated with SiO x /Si Bragg mirrors. The presented devices are characterized by improved slope efficiency documented in L-I characteristics and the stable single-longitudinal mode operation at 1165.22 nm with narrow line width of 0.1 nm. The etched air slit in the laser cavity and a dielectric Bragg mirrors at the rear facet improved the filtering and reflection of the propagated light, what preferred the single-longitudinal mode operation accompanied by an increase of the side-mode-suppression ratio. In addition we found that the deflection part acts as an amplifying region with the measured maximal optical enhancement of 3.