2000
DOI: 10.1016/s0022-0248(00)00112-3
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Properties of lattice matched ZnMgSeTe quaternary alloys grown on ZnTe substrates

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Cited by 9 publications
(5 citation statements)
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“…The growth temperature for the lattice-matched Zn 1Àx Mg x Se y Te 1Ày quaternary alloys was optimized. We have grown Zn 0:8 Mg 0:2 Se 0:12 Te 0:88 layers in the substrate temperature range of from 260 to 330 C. We note that the linewidth of the PL in that temperature zone is as narrow as 5.9 meV [7], which indicates the suppression of composition fluctuations in the alloy. Such high-crystal quality ZnMgSeTe layers are obtained up to high Mg content ($40%).…”
Section: Resultsmentioning
confidence: 97%
“…The growth temperature for the lattice-matched Zn 1Àx Mg x Se y Te 1Ày quaternary alloys was optimized. We have grown Zn 0:8 Mg 0:2 Se 0:12 Te 0:88 layers in the substrate temperature range of from 260 to 330 C. We note that the linewidth of the PL in that temperature zone is as narrow as 5.9 meV [7], which indicates the suppression of composition fluctuations in the alloy. Such high-crystal quality ZnMgSeTe layers are obtained up to high Mg content ($40%).…”
Section: Resultsmentioning
confidence: 97%
“…ZnMgSeTe quaternary alloys were grown at the temperature zone of 310Ϯ10°C. 4 The reflection high energy electron diffraction ͑RHEED͒ pattern was extremely streaky during the growth of quaternary alloys. Thus, by monitoring RHEED intensity oscillations, in situ control of alloy composition, 3 and thickness control of the quantum well structure were achieved.…”
mentioning
confidence: 99%
“…Thus, Zn 1À x Mg x Se y Te 1À y is expected to be one of the best materials as a cladding layer for improving the performance of ZnTe pure-green light-emitting-diodes [5]. So far, several investigations have been reported on the preparation of Zn 1À x Mg x Se y Te 1À y by means of molecular beam epitaxy [2,6,7]. Unfortunately there are only a few reports on the growth of Zn 1À x Mg x Se y Te 1À y using metalorganic vapor phase epitaxy (MOVPE) [8], which is a potential epitaxial growth technique for mass production.…”
Section: Introductionmentioning
confidence: 99%